W9412G6JH-5I

IC DRAM 128MBIT SSTL2 66TSOP II
Part Description

IC DRAM 128MBIT SSTL2 66TSOP II

Quantity 53 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time50 nsGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of W9412G6JH-5I – IC DRAM 128MBIT SSTL2 66TSOP II

The W9412G6JH-5I is a 128 Mbit DDR SDRAM device in a 66-TSSOP (66-TSOP II) package. It implements a multi-bank DDR architecture with an SSTL_2 memory interface and is optimized for board-level memory applications requiring a compact footprint.

Key attributes include a 200 MHz clock rating for DDR operation, a 2.3 V–2.7 V supply range, and an operating temperature window from −40°C to 85°C, providing deterministic electrical and timing characteristics for system designers.

Key Features

  • Memory Core  128 Mbit DDR SDRAM organized as 8M × 16, with multi-bank DDR architecture (documented as 2M × 4 banks × 16 bits in the datasheet).
  • Performance  Supports DDR operation with a clock frequency up to 200 MHz and an access time of 50 ns; write cycle time (word page) specified at 15 ns.
  • Interface  SSTL_2 memory interface for systems using SSTL_2 signaling conventions.
  • Command and Mode Support  Implements the standard DDR command set including bank activate, precharge, auto-refresh, self-refresh, mode register set and extended mode register operations as detailed in the datasheet.
  • Power  Recommended supply voltage range of 2.3 V to 2.7 V with defined power-up sequencing and power-down/self-refresh modes described in the datasheet.
  • Package & Temperature  Available in a 66-TSSOP (0.400", 10.16 mm width) TSOP II package; operating temperature range −40°C to 85°C for deployment across commercial and industrial ambient conditions.
  • Electrical and Timing Documentation  Comprehensive electrical characteristics, AC timing, and system-level timing guidance (input/output setup & hold, slew rate, timing waveforms) are provided in the product datasheet.

Typical Applications

  • Systems requiring SSTL_2 memory interfaces  Use the W9412G6JH-5I where an SSTL_2 DDR memory interface and 128 Mbit density are required on the board.
  • Compact board-level memory  The 66-TSSOP II package suits designs with limited PCB area that need DDR SDRAM density in a narrow footprint.
  • Temperature-sensitive deployments  Applications that require operation across −40°C to 85°C can leverage the specified operating range.

Unique Advantages

  • Compact TSOP II footprint: Enables space-efficient board layouts with a 66-TSSOP (0.400", 10.16 mm width) package.
  • SSTL_2 compatibility: Direct fit for systems using SSTL_2 signaling, simplifying interface design.
  • Documented DDR command support: Full command set and mode register functionality are specified, aiding predictable memory control and sequencing.
  • Wide operating voltage window: 2.3 V to 2.7 V supply range accommodates common DDR supply rails.
  • Industrial temperature range: Rated for −40°C to 85°C operation to support broader ambient conditions.
  • Comprehensive timing and electrical data: Datasheet includes AC characteristics, timing waveforms, and system-level guidance for signal integrity and timing margins.

Why Choose IC DRAM 128MBIT SSTL2 66TSOP II?

The W9412G6JH-5I provides a focused DDR SDRAM solution for designs that need 128 Mbit density in a narrow 66-TSSOP II package with SSTL_2 signaling. Its documented timing, command set, and electrical characteristics allow engineers to integrate the device with predictable behavior at up to 200 MHz DDR clock rates.

This device is suited for board-level memory implementations that prioritize a compact footprint, defined operating voltage (2.3 V–2.7 V), and a broad operating temperature range (−40°C to 85°C). The detailed datasheet content supports system validation, timing closure, and reliable memory operation within the specified parameters.

Request a quote or submit a pricing and availability inquiry to receive product information and lead-time details for the W9412G6JH-5I.

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