W9412G6KH-5
| Part Description |
IC DRAM 128MBIT SSTL2 66TSOP II |
|---|---|
| Quantity | 730 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | SSTL_2 | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of W9412G6KH-5 – IC DRAM 128Mbit SSTL2 66-TSSOP II
The W9412G6KH-5 from Winbond Electronics is a 128 Mbit DDR SDRAM organized as 8M × 16 with an SSTL_2 memory interface in a 66‑TSSOP (66‑TSOP II) package. It targets systems that require a compact, low‑voltage DDR memory device with standard SSTL_2 signaling.
Key electrical and timing characteristics include support for a 200 MHz clock frequency, an access time of 50 ns, a write cycle time (word page) of 15 ns, and a recommended supply range of 2.3 V to 2.7 V. The device is specified for operation from 0 °C to 70 °C.
Key Features
- Memory Capacity & Organization 128 Mbit total density arranged as 8M × 16, providing a x16 data path.
- Memory Technology DDR SDRAM architecture supporting double‑data‑rate transfers.
- Interface SSTL_2 memory interface for systems using SSTL signaling.
- Clock & Timing Supports a 200 MHz clock frequency with a documented access time of 50 ns and a write cycle time (word page) of 15 ns.
- Voltage Supply Operates from 2.3 V to 2.7 V to accommodate low‑voltage DDR system designs.
- Package 66‑TSSOP (66‑TSOP II) package with 0.400" (10.16 mm) width for space‑conscious board layouts.
- Operating Temperature Specified for ambient operation from 0 °C to 70 °C (TA).
Unique Advantages
- Compact footprint: The 66‑TSSOP (TSOP II) package delivers DDR memory density in a narrow, board‑space efficient package.
- SSTL_2 compatibility: Native SSTL_2 interface simplifies integration into systems using SSTL signaling standards.
- Low‑voltage operation: 2.3 V to 2.7 V supply range supports reduced power envelope designs compared to higher‑voltage memories.
- Predictable timing: Documented 200 MHz clock support, 50 ns access time and 15 ns write cycle time enable deterministic memory performance planning.
- Standard commercial temperature range: 0 °C to 70 °C rating aligns with general commercial and industrial board‑level applications.
Why Choose IC DRAM 128MBIT SSTL2 66TSOP II?
The W9412G6KH-5 provides a straightforward DDR SDRAM option when you need 128 Mbit density with an SSTL_2 interface in a compact 66‑TSSOP package. Its combination of a 200 MHz clock rating, defined timing parameters, and low‑voltage supply range makes it suitable for designs that require predictable DDR memory behavior and efficient board utilization.
This device is appropriate for engineers and procurement teams specifying a commercial‑temperature DDR memory component where package size, SSTL_2 signaling, and documented timing/voltage characteristics are primary selection criteria.
Request a quote or submit an inquiry to receive pricing, availability and lead‑time information for the W9412G6KH-5.
