W9412G6KH-5I TR

IC DRAM 128MBIT SSTL2 66TSOP II
Part Description

IC DRAM 128MBIT SSTL2 66TSOP II

Quantity 199 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time50 nsGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of W9412G6KH-5I TR – IC DRAM 128MBIT SSTL2 66TSOP II

The W9412G6KH-5I TR is a 128 Mbit DDR SDRAM organized as 8M × 16 with a 2M × 4 banks × 16 bits DDR architecture. It implements an SSTL_2 memory interface and operates from a 2.3 V to 2.7 V supply.

Designed for systems requiring synchronous DDR DRAM, the device offers a 200 MHz clock capability, 50 ns access time and a compact 66-TSSOP (66-TSOP II) package. The device is specified for an operating temperature range of -40°C to 85°C.

Key Features

  • DDR SDRAM Architecture 2M × 4 banks × 16 bits DDR SDRAM organization as documented in the device datasheet.
  • Memory Capacity & Organization 128 Mbit total capacity arranged as 8M × 16, suitable for x16 memory bus implementations.
  • Interface SSTL_2 memory interface compatible with SSTL_2 signaling levels; designed for standard SSTL_2 DDR systems.
  • Performance Clock frequency rated to 200 MHz with an access time of 50 ns and a write cycle time (word/page) of 15 ns.
  • Power Operates from a 2.3 V to 2.7 V supply range.
  • Package 66-TSSOP (66-TSOP II), 0.400" (10.16 mm) width standard package.
  • Temperature Range Specified operating ambient temperature from -40°C to 85°C (TA).
  • Mode Register Control Supports mode register settings including burst length fields and CAS latency configuration as described in the device documentation.

Unique Advantages

  • Compact, industry-standard package: 66-TSSOP (66-TSOP II) provides a space-efficient footprint for board-level DDR memory implementations.
  • SSTL_2 signaling: Native SSTL_2 interface simplifies integration into systems that use SSTL_2 voltage levels for DDR memory buses.
  • Configurable DDR operation: Mode register fields (including burst length and CAS latency) allow tuning of burst and timing behavior to match system requirements.
  • Wide temperature support: -40°C to 85°C operating range supports designs requiring extended ambient conditions.
  • Balanced performance and power: 200 MHz clock rating with a 2.3–2.7 V supply range provides a clear specification point for system power and timing design.

Why Choose W9412G6KH-5I TR?

The W9412G6KH-5I TR is positioned for designs that require a straightforward 128 Mbit DDR SDRAM device with SSTL_2 signaling, compact packaging and defined timing control through mode registers. Its combination of 8M × 16 organization, 2M × 4 bank DDR architecture and 200 MHz operation provides predictable timing characteristics for systems designed around x16 DDR memory.

This device is well suited to engineers and procurement teams seeking a documented DDR SDRAM component with specified supply, timing and temperature ranges. The clear electrical and functional details in the device documentation support integration, timing analysis and board-level layout decisions.

If you need a quote or additional purchasing information for the W9412G6KH-5I TR, submit a request or contact sales to obtain pricing and availability details.

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