W9412G6KH-5I TR
| Part Description |
IC DRAM 128MBIT SSTL2 66TSOP II |
|---|---|
| Quantity | 199 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | SSTL_2 | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of W9412G6KH-5I TR – IC DRAM 128MBIT SSTL2 66TSOP II
The W9412G6KH-5I TR is a 128 Mbit DDR SDRAM organized as 8M × 16 with a 2M × 4 banks × 16 bits DDR architecture. It implements an SSTL_2 memory interface and operates from a 2.3 V to 2.7 V supply.
Designed for systems requiring synchronous DDR DRAM, the device offers a 200 MHz clock capability, 50 ns access time and a compact 66-TSSOP (66-TSOP II) package. The device is specified for an operating temperature range of -40°C to 85°C.
Key Features
- DDR SDRAM Architecture 2M × 4 banks × 16 bits DDR SDRAM organization as documented in the device datasheet.
- Memory Capacity & Organization 128 Mbit total capacity arranged as 8M × 16, suitable for x16 memory bus implementations.
- Interface SSTL_2 memory interface compatible with SSTL_2 signaling levels; designed for standard SSTL_2 DDR systems.
- Performance Clock frequency rated to 200 MHz with an access time of 50 ns and a write cycle time (word/page) of 15 ns.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package 66-TSSOP (66-TSOP II), 0.400" (10.16 mm) width standard package.
- Temperature Range Specified operating ambient temperature from -40°C to 85°C (TA).
- Mode Register Control Supports mode register settings including burst length fields and CAS latency configuration as described in the device documentation.
Unique Advantages
- Compact, industry-standard package: 66-TSSOP (66-TSOP II) provides a space-efficient footprint for board-level DDR memory implementations.
- SSTL_2 signaling: Native SSTL_2 interface simplifies integration into systems that use SSTL_2 voltage levels for DDR memory buses.
- Configurable DDR operation: Mode register fields (including burst length and CAS latency) allow tuning of burst and timing behavior to match system requirements.
- Wide temperature support: -40°C to 85°C operating range supports designs requiring extended ambient conditions.
- Balanced performance and power: 200 MHz clock rating with a 2.3–2.7 V supply range provides a clear specification point for system power and timing design.
Why Choose W9412G6KH-5I TR?
The W9412G6KH-5I TR is positioned for designs that require a straightforward 128 Mbit DDR SDRAM device with SSTL_2 signaling, compact packaging and defined timing control through mode registers. Its combination of 8M × 16 organization, 2M × 4 bank DDR architecture and 200 MHz operation provides predictable timing characteristics for systems designed around x16 DDR memory.
This device is well suited to engineers and procurement teams seeking a documented DDR SDRAM component with specified supply, timing and temperature ranges. The clear electrical and functional details in the device documentation support integration, timing analysis and board-level layout decisions.
If you need a quote or additional purchasing information for the W9412G6KH-5I TR, submit a request or contact sales to obtain pricing and availability details.