W9425G6JB-5I

The W9425G6JB-5I is a 256 Mbit DDR SDRAM configured as 16M × 16 with an internal organization of 4M × 4 banks × 16 bits and a parallel memory interface. It implements standard DDR SDRAM command and mode-register functions, including bank activate, precharge, auto-refresh and self-refresh operations as described in the device datasheet.

Designed for systems requiring a compact low-voltage DDR memory component, the device operates at a clock frequency up to 200 MHz, with an access time of 55 ns, a write cycle time (word page) of 15 ns, supply voltage range of 2.3 V to 2.7 V, and an operating temperature range of -40°C to 85°C. The package is a 60-TFBGA (8×13).

Key Features

• Memory Architecture 256 Mbit DDR SDRAM organized as 16M × 16; internal architecture documented as 4M × 4 banks × 16 bits.
• DDR Command Set Supports standard DDR SDRAM commands and mode register operations (bank activate, precharge, read, write, auto-refresh, self-refresh, mode/extended mode register set) as detailed in the device documentation.
• Performance Clock frequency up to 200 MHz with an access time of 55 ns and a write cycle time (word page) of 15 ns for predictable read/write timing.
• Interface Parallel memory interface providing standard DDR signaling and burst operations as defined in the datasheet.
• Power Low-voltage operation with a recommended supply range of 2.3 V to 2.7 V.
• Package and Mounting Supplied in a compact 60-TFBGA (8×13) package suitable for board-level mounting.
• Temperature Range Specified operating ambient temperature from -40°C to 85°C (TA).

Unique Advantages

• Standard DDR architecture: 4M × 4 banks × 16 bits and 16M × 16 organization provide predictable DDR behavior and compatibility with designs using parallel DDR SDRAM primitives described in the datasheet.
• Balanced read/write timing: 55 ns access time and 15 ns write cycle time (word page) support deterministic burst read/write operations at the specified clock rate.
• Low-voltage operation: 2.3 V–2.7 V supply range reduces power domain complexity where low-voltage DDR memory is required.
• Compact BGA footprint: 60-TFBGA (8×13) package minimizes PCB area while providing full DDR signal connectivity.
• Extended temperature support: -40°C to 85°C operating range enables use across a broad set of temperature conditions specified for the device.
• Comprehensive functional detail: Datasheet includes full command descriptions, timing waveforms, mode register definitions and system timing tables to support implementation and validation.

Why Choose IC DRAM 256MBIT PAR 60TFBGA?

The W9425G6JB-5I delivers a compact, low-voltage DDR SDRAM option with a clear specification set—256 Mbit density, 16M × 16 organization, 200 MHz clock capability, and documented DDR command and timing behavior. Its electrical and timing parameters, along with the 60-TFBGA package and -40°C to 85°C operating range, make it a suitable choice for designs that require documented DDR functionality in a small footprint.

Selection of this device provides engineers with explicit timing, command and mode-register information in the datasheet to support system integration and validation, while the supply voltage and temperature specifications define clear operating boundaries for power and thermal planning.

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