W9425G6KH-5

The W9425G6KH-5 is a 256 Mbit DDR SDRAM device from Winbond Electronics organized as 16M × 16 with 4M × 4 banks × 16 bits. It implements a parallel DDR memory interface and supports standard DDR command sets and mode/extended mode register operations.

Key electrical and mechanical characteristics include a 200 MHz input clock, a supply voltage range of 2.3 V to 2.7 V, 55 ns access time, and a 66-TSOP II (66-TSSOP, 0.400", 10.16 mm width) package, making it suitable for systems that require on-board parallel DDR memory with these exact specifications.

Key Features

• Memory Architecture 256 Mbit DDR SDRAM organized as 16M × 16 with 4M × 4 banks × 16 bits, providing defined internal banking for standard DDR operations.
• DDR SDRAM Core Implements DDR SDRAM functionality with support for mode register set, extended mode register set, and standard DDR commands (read, write, auto-refresh, precharge, self-refresh).
• Performance Rated for a 200 MHz input clock frequency with an access time of 55 ns and a word/page write cycle time of 15 ns.
• Interface Parallel memory interface with DDR command support including burst read/write, burst termination, and power down/self-refresh control.
• Power & Voltage Operates from a 2.3 V to 2.7 V supply range and supports power down and self-refresh modes as documented in the device functional descriptions.
• Package & Thermal Available in a 66-TSOP II / 66-TSSOP package (0.400", 10.16 mm width) and specified for an ambient operating temperature range of 0°C to 70°C (TA).

Typical Applications

• Parallel DDR system memory — Provides 256 Mbit of DDR SDRAM capacity in a 16M × 16 organization for designs that use a parallel DDR interface and require standard DDR command support.
• On-board buffer and frame memory — Uses the device’s 256 Mbit density and burst read/write capability for local buffering in systems that match the device’s electrical and timing requirements.
• Embedded DDR subsystems — Fits embedded boards where a 66-TSOP II package, 2.3 V–2.7 V operation, and 0°C–70°C ambient range align with system constraints.

Unique Advantages

• Defined DDR architecture: Clear 4-bank × 16-bit organization and standard DDR command support simplify memory control and integration with parallel DDR controllers.
• Measured timing profile: 200 MHz clock rating with 55 ns access time and 15 ns write cycle time provides concrete, verifiable timing targets for system timing design.
• Flexible power operation: Support for power down and self-refresh modes enables reduced power states as specified in the functional description.
• Compact board footprint: 66-TSOP II (66-TSSOP) packaging offers a narrow 10.16 mm width option for space-constrained PCB layouts.
• Wide supply tolerance: Operates across a 2.3 V–2.7 V supply window to match systems designed for standard DDR supply ranges.

Why Choose W9425G6KH-5?

The W9425G6KH-5 positions itself as a straightforward, specification-driven 256 Mbit DDR SDRAM option from Winbond Electronics for designs requiring a parallel DDR interface, deterministic timing, and compact TSOP packaging. Its documented command set, mode register capabilities, and power management features provide the control needed for integration into parallel DDR memory subsystems.

Choose this device when your design requires a verified DDR SDRAM footprint and electrical specification set (200 MHz clock, 2.3 V–2.7 V supply, 0°C–70°C ambient) packaged in a 66-TSOP II form factor and supported by the detailed functional and timing documentation provided by the manufacturer.

Request a quote or contact sales to discuss availability, lead times, and pricing for the W9425G6KH-5.