W9464G6JH-4

The W9464G6JH-4 is a 64 Mbit DDR SDRAM device organized as 4M × 16, implemented as 1M × 4 banks × 16 bits. It provides a parallel DDR SDRAM architecture optimized for systems requiring compact, low-voltage volatile memory.

Key characteristics include a 250 MHz clock frequency rating, 2.4 V–2.7 V supply range, and a 66‑TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) package, making the device suitable for space-constrained boards operating in standard commercial temperature ranges (0 °C to 70 °C).

Key Features

• Memory Architecture Organized as 4M × 16 bits (1M × 4 banks × 16 bits) delivering 64 Mbit total capacity in a x16 data configuration.
• DDR SDRAM Technology Double data rate SDRAM implementation with parallel memory interface for synchronous read/write operations.
• Performance Rated clock frequency up to 250 MHz with an access time of 55 ns and a write cycle time (word/page) of 15 ns.
• Power Operates from a 2.4 V to 2.7 V supply range, compatible with low-voltage DDR systems.
• Command and Mode Support Supports standard DDR command set as documented in the device datasheet, including Bank Activate, Precharge, Read/Write, Auto Refresh, Self Refresh, Mode Register Set and Extended Mode Register operations, DLL reset and CAS latency configuration fields.
• Package Available in a 66‑TSOP II (66‑TSSOP, 0.400", 10.16 mm width) surface-mount package for compact board designs.
• Operating Environment Specified for commercial operating temperatures from 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory expansion — Provides 64 Mbit of volatile DDR SDRAM for systems requiring parallel-memory density in a compact package.
• Buffering and data staging — Used where synchronous read/write buffering with DDR timing and banked architecture is required.
• Compact board designs — Suited to space-constrained PCBs that require a 66‑TSOP II packaged DDR memory device with low-voltage operation.

Unique Advantages

• Compact TSOP II footprint: 66‑TSSOP (0.400", 10.16 mm) package enables high-density placement on small PCBs.
• Banked organization: 1M × 4 bank structure (4M × 16 overall) supports parallel bank operations for predictable DDR access patterns.
• Low-voltage operation: 2.4 V–2.7 V supply range aligns with low-voltage DDR system designs.
• Comprehensive DDR command support: Mode register, extended mode register, auto and self-refresh, DLL reset and CAS latency fields provide flexible timing and operational control.
• Deterministic timing parameters: Documented access time (55 ns), write cycle time (15 ns), and clock frequency rating (250 MHz) support predictable system timing design.

Why Choose W9464G6JH-4?

The W9464G6JH-4 positions as a compact, low-voltage DDR SDRAM option for designs that need 64 Mbit of volatile memory with banked 4M × 16 organization. Its documented DDR command feature set and configurable mode/extended mode registers enable flexible timing and operational control for synchronous memory subsystems.

This device is appropriate for engineers specifying a surface-mount DDR memory in a 66‑TSOP II package who require explicit timing parameters (250 MHz clock rating, 55 ns access time, 15 ns write cycle) and commercial temperature operation. The clear datasheet-defined command and timing fields support deterministic integration into existing DDR memory controllers and system designs.

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