W9464G6JH-5I

The W9464G6JH-5I is a 64 Mbit DDR SDRAM organized as 4M × 16 with a parallel memory interface and support for standard DDR command operations. It implements a multi-bank DDR architecture (1M × 4 banks × 16 bits) to provide burst-oriented read/write access and standard DDR features such as Mode Register Set, Auto Refresh and Self Refresh.

With a 200 MHz clock rating, low-voltage operation (2.3 V–2.7 V) and a compact 66-TSOP II package, this device is intended for systems that require on-board parallel DDR DRAM in a small footprint and extended temperature operation.

Key Features

• Density & Organization — 64 Mbit memory organized as 4M × 16 (1M × 4 banks × 16 bits) to provide parallel x16 data path operation.
• DDR SDRAM Architecture — Supports DDR SDRAM command set and operation including Activate, Precharge, Read, Write, Auto Refresh, Self-Refresh, Mode Register Set and Extended Mode Register Set.
• Clock & Timing — Rated for 200 MHz clock frequency with an access time of 55 ns and a word/page write cycle time of 15 ns for burst-oriented transfers.
• Voltage & Power — Operates from 2.3 V to 2.7 V, enabling low-voltage DDR operation.
• Package — 66-TSSOP / 66-TSOP II package (0.400", 10.16 mm width) for compact board-level integration.
• Operating Temperature — Industrial temperature range from -40 °C to 85 °C (TA) for extended-environment operation.
• Configurable Mode & Timing — Mode register fields include Burst Length, Addressing Mode Select, CAS Latency, DLL Reset and extended mode settings for flexible timing and burst configuration.

Typical Applications

• Embedded memory expansion — On-board 64 Mbit parallel DDR SDRAM for systems that need compact x16 DRAM in a TSOP II footprint.
• Board-level memory arrays — Integration where a parallel DDR memory device is required for burst read/write operations with configurable CAS latency and mode registers.
• Industrial electronics — Use in equipment operating across -40 °C to 85 °C that requires low-voltage DDR SDRAM in a small package.

Unique Advantages

• Parallel x16 data path: Provides a 4M × 16 memory organization suitable for systems expecting a parallel interface and x16 data transfers.
• Standard DDR command support: Comprehensive command and mode register support (Activate, Read/Write, Auto Refresh, Self-Refresh, MRS/EMRS) for predictable DDR control and timing configuration.
• Compact 66-TSOP II package: 66-TSSOP (0.400", 10.16 mm width) package enables high-density board integration where board space is constrained.
• Low-voltage operation: 2.3 V–2.7 V supply range supports low-voltage DDR system designs.
• Industrial temperature range: Rated for -40 °C to 85 °C to support extended-environment deployments.
• Flexible timing control: Configurable mode register fields (burst length, CAS latency, DLL reset, etc.) allow designers to tune burst behavior and latency to system requirements.

Why Choose W9464G6JH-5I?

The W9464G6JH-5I positions itself as a compact, low-voltage DDR SDRAM device delivering 64 Mbit density in a 66-TSOP II package with standard DDR control features. Its 200 MHz clock rating, configurable mode registers and industrial temperature range make it suitable for board-level designs that require a parallel x16 DDR memory element with flexible timing and burst control.

This device fits designs that need a small-footprint, parallel DDR memory component with verifiable timing parameters and standard DDR command support. Backed by Winbond Electronics documentation for power-up sequencing, command functions and AC/DC characteristics, the W9464G6JH-5I supports implementation and integration into systems requiring these explicit capabilities.

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