W9464G6KH-5

The W9464G6KH-5 is a 64 Mbit DDR SDRAM device organized as 4M × 16 with a parallel x16 interface. It implements DDR SDRAM architecture with multiple bank operation and standard DDR command functionality suitable for systems that require parallel DDR memory.

Key attributes include a 200 MHz clock frequency rating, 2.3 V–2.7 V supply range, and a compact 66-TSOP II (66-TSSOP, 10.16 mm width) package. The device is specified for operation from 0°C to 70°C and is documented in a detailed Winbond datasheet describing commands, timing, and electrical characteristics.

Key Features

• Memory Architecture — 64 Mbit DRAM organized as 4M × 16 with multi-bank DDR architecture (datasheet describes 1M × 4 banks × 16 bits).
• DDR SDRAM Core — Parallel DDR SDRAM technology with support for standard DDR commands including activate, precharge, read, write, auto-refresh, and self-refresh operations.
• Clock & Timing — Rated to 200 MHz input clock frequency with documented AC characteristics; access time listed as 55 ns and write cycle time (word/page) at 15 ns.
• Mode Register Control — Programmable mode and extended mode registers for burst length, addressing mode, CAS latency field, and DLL reset bits (as described in the datasheet).
• Power — Operating supply voltage range of 2.3 V to 2.7 V with power-down and self-refresh mode behaviors defined in the device documentation.
• Package — 66-TSOP II (66-TSSOP, 0.400" / 10.16 mm width) surface-mount package for compact board-level integration.
• Operating Environment — Specified ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• Parallel DDR memory subsystems — Used where a 64 Mbit parallel DDR SDRAM block is required and documented DDR command/timing behavior is needed.
• Embedded systems — Integration into boards that require a compact, surface-mount x16 DDR memory device with defined electrical and timing specifications.
• Prototyping and evaluation — Suitable for evaluation platforms that exercise DDR command sequences, mode register programming, and standard refresh/self-refresh operations described in the datasheet.

Unique Advantages

• Compact 66-TSOP II package: Enables high-density board integration while maintaining a standard TSOP II footprint (0.400", 10.16 mm width).
• Standard DDR command support: Comprehensive command set documented (activate, precharge, auto-refresh, self-refresh, mode register set) for predictable DDR operation and system design.
• Flexible timing control: Mode register programmability for burst length, CAS latency and DLL reset provides adaptability to system timing requirements.
• Defined performance points: 200 MHz clock rating, 55 ns access time and 15 ns write cycle time (word/page) give clear performance targets for memory subsystem design.
• Narrow supply range: 2.3 V–2.7 V supply specification supports designs targeting standard DDR voltage domains.
• Documented electrical and timing data: Detailed datasheet content covering pinout, AC/DC characteristics, timing waveforms and system-level notes supports engineering validation.

Why Choose IC DRAM 64MBIT PAR 66TSOP II?

The W9464G6KH-5 positions as a documented DDR SDRAM device for designs that require a 64 Mbit parallel x16 memory in a compact TSOP II package. Its combination of multi-bank DDR architecture, defined timing parameters, and mode register flexibility makes it suitable for systems needing predictable DDR behavior and clear electrical guidance.

Manufactured by Winbond Electronics and accompanied by a comprehensive datasheet, this device is appropriate for engineers specifying a documented DDR memory component for board-level integration where package size, supply voltage range, and operating temperature are primary constraints.

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