W9464G6JH-5

The W9464G6JH-5 is a 64 Mbit DDR SDRAM device organized as 1M × 4 banks × 16 bits (4M × 16) in a parallel memory format. It implements DDR SDRAM architecture and supports standard DDR command and mode-register operations as described in the device documentation.

Designed for board-level memory applications, the device supports a 200 MHz input clock frequency, operates from 2.3 V to 2.7 V, and is offered in a 66-TSSOP / 66-TSOP II package with an operating ambient range of 0 °C to 70 °C.

Key Features

• Memory Architecture Organized as 1M × 4 banks × 16 bits (4M × 16) delivering a total memory size of 64 Mbit in a parallel DRAM format.
• DDR SDRAM Core Implements DDR SDRAM command set and operational modes including bank activate, precharge, read, write, auto-refresh and self-refresh as documented in the device datasheet.
• Performance Supports a clock frequency of 200 MHz with an access time of 55 ns and a write cycle time (word/page) of 15 ns.
• Voltage Rated for VCC supply range of 2.3 V to 2.7 V.
• Package & Mounting Available in a 66-TSSOP / 66-TSOP II package (0.400" / 10.16 mm width) for surface-mount board designs.
• Operating Temperature Specified for ambient operation from 0 °C to 70 °C (TA).
• DDR Timing & Mode Control Supports configurable mode register settings including burst length, CAS latency, DLL reset and extended mode register options as described in the datasheet.

Typical Applications

• Compact board-level DRAM — Use where a 64 Mbit parallel DDR SDRAM footprint in 66-TSOP II is required.
• Memory expansion for legacy parallel DDR systems — Provides 4M × 16 organization for systems that use parallel DDR memory interfaces.
• Designs constrained by supply voltage — Suitable for applications operating within a 2.3 V to 2.7 V memory supply window.
• Ambient-temperature applications — Intended for systems operating in environments between 0 °C and 70 °C.

Unique Advantages

• Compact TSOP II footprint: 66-TSSOP / 66-TSOP II package (10.16 mm width) enables higher density on board-level memory layouts.
• DDR SDRAM command support: Full set of DDR commands and mode-register controls for flexible timing and burst configuration.
• Moderate performance profile: 200 MHz clock support with 55 ns access time and 15 ns write cycle time for responsive memory transactions.
• Low-voltage operation: 2.3 V to 2.7 V supply range aligns with common memory power rails for compatible system designs.
• Defined operating range: Specified 0 °C to 70 °C ambient temperature rating for commercial-grade applications.

Why Choose W9464G6JH-5?

The W9464G6JH-5 positions itself as a straightforward 64 Mbit DDR SDRAM solution for board-level implementations that require a parallel DDR memory interface in a compact 66-TSOP II package. Its documented DDR command set and mode-register capabilities allow designers to configure burst length, CAS latency and other operational parameters to match system timing requirements.

This device is suitable for designs that need a defined commercial operating range (0 °C to 70 °C), a 2.3 V–2.7 V supply envelope, and a 200 MHz clock domain. It is appropriate for engineers specifying a compact, mid-density DDR SDRAM component with verifiable timing and electrical parameters.

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