W9425G6KH-5I

The W9425G6KH-5I is a 256 Mbit DDR SDRAM device organized as 16M × 16, provided in a 66-TSOP II (66-TSSOP, 0.400", 10.16 mm width) package. It implements DDR SDRAM architecture with parallel memory interface and on-die support for standard DDR command sequences.

Designed for systems requiring a 256 Mbit volatile memory with a parallel DDR interface, the device delivers a 200 MHz clock operating point, 55 ns access time, and a supply range of 2.3 V to 2.7 V while supporting standard DRAM control functions such as bank-activate, read/write, auto-refresh and self-refresh.

Key Features

• Memory Architecture  256 Mbit DDR SDRAM organized as 16M × 16; datasheet describes internal organization as 4M × 4 banks × 16 bits for DDR operation.
• DDR Performance  Supports a clock frequency of 200 MHz with an access time of 55 ns and a write cycle time (word page) of 15 ns.
• Parallel Memory Interface  Standard parallel DDR interface and command set including bank activate, precharge, read, write, auto-refresh and self-refresh operations as defined in the device documentation.
• Power  Operates from a 2.3 V to 2.7 V supply range suitable for DDR power domains.
• Package  Delivered in a 66-TSOP II (66-TSSOP) package with 0.400" (10.16 mm) body width for compact board-level integration.
• Temperature Range  Specified operating temperature range from −40°C to 85°C (TA) for use in a wide ambient range.

Typical Applications

• Parallel DDR memory subsystems  Use as a 256 Mbit DDR SDRAM building block where a parallel x16 memory interface is required.
• Embedded systems requiring external volatile memory  Provides additional DRAM capacity in systems that need 256 Mbit density with standard DDR command support.
• Board-level memory expansion  Compact 66-TSOP II package enables integration into space-constrained PCBs requiring DDR SDRAM functionality.

Unique Advantages

• Right-sized density: 256 Mbit organized as 16M × 16 offers a defined capacity and data width for straightforward system memory planning.
• DDR command compatibility: Supports standard DDR SDRAM commands (read/write, auto-refresh, self-refresh, mode register set) as documented in the device datasheet to simplify controller integration.
• Compact package: 66-TSOP II (66-TSSOP) footprint provides a balance of pin count and PCB space efficiency for board-level designs.
• Wide supply tolerance: 2.3 V to 2.7 V operating range supports common DDR power rails for consistent operation.
• Extended ambient operation: −40°C to 85°C operating range enables deployment across a broad set of operating environments.

Why Choose W9425G6KH-5I?

The W9425G6KH-5I is positioned as a straightforward 256 Mbit DDR SDRAM device for designs that require a parallel x16 DDR interface, compact 66-TSOP II packaging, and a proven set of DDR control functions. Its combination of 200 MHz clock support, 55 ns access time, and standard DDR command support makes it suitable for systems that need deterministic DRAM behavior and predictable integration.

This device is well suited to engineers and procurement teams specifying a defined-density DDR memory component for board-level memory expansion or embedded system designs where package size, voltage range, and operating temperature are key selection criteria. Documentation includes detailed timing, command, and electrical characteristics to support system-level integration and validation.

Request a quote or contact sales to check availability, lead times, and pricing for the W9425G6KH-5I.