W9425G6KH-4

The W9425G6KH-4 is a 256 Mbit DDR SDRAM device organized as 16M × 16 with 4M × 4 banks × 16 bits architecture. It provides a parallel DDR memory interface designed for board-level integration where a compact TSOP II package and standard DDR command set are required.

Targeted at designs that need synchronous, volatile DRAM capacity with defined timing and electrical characteristics, this device delivers 250 MHz clock support, a 2.4 V–2.7 V supply range, and an industrial-adjacent operating temperature window for conventional electronics applications.

Key Features

• Memory Core 256 Mbit DDR SDRAM organized as 16M × 16 with internal bank architecture described as 4M × 4 banks × 16 bits.
• Interface & Operation Parallel DDR memory interface supporting the standard DDR command set including Bank Activate, Precharge, Read, Write, Auto Refresh, Mode Register Set, Extended Mode Register Set, Self Refresh and Power Down commands.
• Performance Rated clock frequency up to 250 MHz with an access time listed as 52 ns and write cycle time (word/page) of 15 ns, supporting burst operations and configurable burst lengths via mode registers.
• Power Supply voltage range of 2.4 V to 2.7 V as defined in the device specifications.
• Package & Mounting Supplied in a 66‑TSSOP / 66‑TSOP II package (0.400" / 10.16 mm width) for compact board placement and standard surface-mount assembly.
• Temperature Range Specified operating ambient temperature from 0°C to 70°C (TA).
• Detailed Timing & Electrical Data Comprehensive timing, command timing, AC/DC characteristics, and system-level notes are provided in the device documentation for integration and signal integrity planning.

Typical Applications

• Board‑level Memory Expansion Use where a 256 Mbit parallel DDR memory complement is required for embedded system designs and expansion modules.
• Embedded Systems Integrates into control and processing boards that require synchronous DRAM with defined timing parameters and standard DDR command support.
• Consumer and Industrial Electronics Suitable for electronic products operating within a 0°C to 70°C ambient range that need compact, surface-mount DDR memory.

Unique Advantages

• Standard DDR Command Set: Supports a full set of DDR commands (Activate, Read/Write, Auto Refresh, Mode Register operations, Self Refresh, Power Down) referenced in the device documentation to simplify controller implementation.
• Defined Performance Envelope: 250 MHz clock rating, 52 ns access time, and 15 ns write cycle time provide explicitly stated timing bounds for system timing budgets.
• Compact TSOP II Packaging: 66‑TSSOP / 66‑TSOP II packaging (10.16 mm width) enables higher density board layouts while remaining compatible with standard assembly processes.
• Wide Supply Tolerance: Operates across a 2.4 V–2.7 V supply range, allowing design flexibility with common DDR power rails.
• Comprehensive Documentation: Detailed datasheet content covering pin descriptions, block diagrams, command and timing diagrams, AC/DC characteristics and system notes aids design validation and integration.

Why Choose W9425G6KH-4?

The W9425G6KH-4 provides a compact, board-mount DDR SDRAM option with clearly defined electrical and timing specifications for designs needing 256 Mbit of volatile memory in a parallel DDR format. Its supported command set, documented timing parameters, and TSOP II footprint make it suitable for engineers implementing synchronous DRAM where predictable performance and integration guidance are required.

This device is appropriate for projects that demand explicit timing data, standard DDR operation, and a small-footprint package. The available datasheet content supplies the necessary electrical, timing, and operational details to support system-level validation and signal integrity planning.

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