W9425G6JB-5

The W9425G6JB-5 is a 256 Mbit DDR SDRAM device organized as 16M × 16 with a parallel x16 interface. It implements DDR SDRAM architecture with 4 banks and supports standard DDR command operations described in the device documentation.

Designed for board-level memory subsystems, the device operates up to a 200 MHz input clock and runs from a 2.3 V to 2.7 V supply, offering a compact 60-ball TFBGA (8×13) package and a commercial operating temperature range of 0 °C to 70 °C.

Key Features

• Memory Core DDR SDRAM architecture with 4M × 4 banks × 16 bits and a memory organization of 16M × 16, providing a 256 Mbit memory capacity.
• Clock and Timing Supports a 200 MHz clock frequency with an access time of 55 ns and a write cycle time (word/page) of 15 ns.
• Interface Parallel memory interface with x16 data width suitable for standard DDR command sequences (Bank Activate, Precharge, Read, Write, Auto Refresh, Self Refresh, Mode Register Set, Extended Mode Register Set).
• Power Operates from a 2.3 V to 2.7 V supply voltage range.
• Package 60-TFBGA package, ball grid array footprint dimension 8×13, optimized for compact board integration.
• Operating Conditions Commercial ambient operating temperature range of 0 °C to 70 °C.

Typical Applications

• Board-level DRAM subsystems — Provides a 256 Mbit DDR SDRAM option in a compact 60-TFBGA package for embedded memory designs requiring a parallel x16 interface.
• Memory expansion modules — Suitable for designs that need a defined 16M × 16 memory organization and standard DDR command support for refresh and power-down modes.
• Compact system designs — The 60-ball TFBGA (8×13) package supports small-footprint implementations where board space is constrained.

Unique Advantages

• Clear memory capacity and organization: 256 Mbit arranged as 16M × 16 simplifies address and data planning for system designers.
• Standard DDR command set support: Includes Bank Activate, Precharge, Read/Write, Auto Refresh and Self Refresh sequences as documented, enabling integration with standard DDR controllers.
• Defined timing parameters: 200 MHz clock frequency, 55 ns access time and 15 ns write cycle time provide deterministic timing for system timing budgets.
• Narrow voltage window: 2.3 V to 2.7 V supply range allows precise power supply design and margin planning.
• Compact BGA footprint: 60-TFBGA (8×13) package reduces board area while maintaining a full x16 memory interface.

Why Choose W9425G6JB-5?

The W9425G6JB-5 offers a straightforward DDR SDRAM option with explicit electrical and timing specifications—256 Mbit capacity, 16M × 16 organization, 200 MHz clock support, and documented DDR command and mode register operations—facilitating predictable integration into memory subsystems. Its 60-TFBGA (8×13) package and commercial temperature range make it suitable for compact designs where a defined DDR SDRAM footprint and standard command behavior are required.

Engineers specifying the W9425G6JB-5 can rely on the device’s published timing, command set, and power parameters to plan board-level memory integration and system timing budgets with clarity.

If you need pricing, lead-time, or a formal quote for the W9425G6JB-5, submit a request or contact the supplier’s commercial channel to receive a quote or additional procurement information.