W9412G6KH-5I

The W9412G6KH-5I is a 128 Mbit DDR SDRAM device organized as 8M × 16 with an SSTL_2 memory interface. It implements standard DDR SDRAM architecture and supports banked operation and common DDR command sets as documented in the device datasheet.

Designed for board-level memory implementations that require a compact 66-TSSOP / 66-TSOP II package, the device operates up to a 200 MHz clock frequency and runs from a 2.3 V to 2.7 V supply with an ambient operating range of -40°C to 85°C.

Key Features

• Memory Capacity & Organization — 128 Mbit total capacity arranged as 8M × 16 bits for x16 data bus configurations.
• DDR SDRAM Core — Implemented as DDR SDRAM with multi-bank architecture; datasheet documents standard DDR commands and modes including bank activate, precharge, auto refresh, self refresh, and mode register operations.
• Interface — SSTL_2 memory interface for systems requiring SSTL_2 signaling.
• Performance — Supports a clock frequency of 200 MHz with an access time of 50 ns and a write cycle time (word page) of 15 ns as specified.
• Power — Operates from a 2.3 V to 2.7 V supply voltage range.
• Package — 66-TSSOP / 66-TSOP II package (0.400" / 10.16 mm width) for compact PCB integration on space-constrained boards.
• Temperature Range — Specified ambient operating temperature from -40°C to 85°C (TA).

Typical Applications

• SSTL_2 Memory Subsystems — Use where an SSTL_2 x16 DDR SDRAM device is required for system memory or expansion.
• Board-Level Memory Expansion — Fits 66-TSOP II footprints for upgrading or populating memory on existing PCB designs.
• High-Speed Buffering — Suitable for buffering and transient storage in applications that leverage a 200 MHz DDR clock and x16 data width.

Unique Advantages

• Compact 66-TSOP II footprint — Enables dense PCB layouts while providing 128 Mbit DDR capacity in a small package.
• SSTL_2 signaling support — Matches SSTL_2 interface requirements to simplify integration with SSTL_2 memory controllers.
• Wide ambient temperature range — Rated for -40°C to 85°C to cover a broad set of board-level operating environments.
• Low-voltage operation — 2.3 V to 2.7 V supply reduces system-level power domain complexity where lower-voltage DDR operation is required.
• Comprehensive DDR command set — Datasheet-documented support for standard DDR operations (activate, precharge, read/write, auto/self-refresh, and mode register set) for predictable memory behavior.

Why Choose IC DRAM 128MBIT SSTL2 66TSOP II?

The W9412G6KH-5I positions itself as a compact DDR SDRAM component for designs requiring a 128 Mbit x16 memory with SSTL_2 interface compatibility, documented DDR command support, and a 66-TSOP II package. Its combination of a 200 MHz clock rating, defined access and cycle timings, and a 2.3 V–2.7 V operating range makes it suitable for board-level memory implementations where footprint, thermal range, and SSTL_2 signaling are primary considerations.

Engineers specifying the W9412G6KH-5I benefit from explicit electrical and timing definitions in the device datasheet, aiding predictable integration into memory subsystems and buffering roles on mixed-signal or digital boards.

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