W9425G6EH-5

The W9425G6EH-5 is a 256 Mbit DDR SDRAM device in a parallel memory format designed for systems requiring volatile high-density main or auxiliary memory. It implements a 16M × 16 memory organization and standard DDR command functions documented in the device datasheet.

This device targets designs that need a 256 Mbit parallel DDR SDRAM with a 250 MHz clock capability, defined timing parameters (55 ns access time, 15 ns write cycle time for word/page), and a compact 66-TSOP II package footprint.

Key Features

• Memory Architecture 256 Mbit DRAM organized as 16M × 16, supporting the DDR SDRAM architecture and multi-bank operation as described in the product documentation.
• DDR Function Set Supports standard DDR command functions including bank activate, precharge, read, write, auto-precharge, auto refresh, self-refresh and power-down modes, plus Mode Register and Extended Mode Register operations.
• Performance Specified for operation with a clock frequency of 250 MHz and an access time of 55 ns; write cycle time (word/page) is 15 ns as listed in the device specifications.
• Voltage and Power Operates from a supply voltage range of 2.3 V to 2.7 V, matching typical 2.5 V DDR system rails.
• Package Available in a 66-TSSOP / 66-TSOP II package with a 0.400" (10.16 mm) width, suitable for space-constrained board layouts requiring TSOP II mounting.
• Operating Conditions Commercial temperature range specified from 0°C to 70°C (TA).
• Documentation Full device functional description, electrical and timing characteristics, and command/timing waveforms are provided in the datasheet for integration and validation.

Unique Advantages

• High-density DDR memory: 256 Mbit capacity in a 16M × 16 organization provides a compact memory option where parallel DDR is required.
• Defined timing for system design: Published access time (55 ns), write cycle time (15 ns), and clock frequency (250 MHz) allow predictable timing integration and validation.
• Standard DDR feature support: Comprehensive command set including self-refresh and power-down modes enables standard DDR memory management and power control.
• Low-voltage operation: 2.3 V to 2.7 V supply range aligns with 2.5 V DDR systems for straightforward voltage planning.
• Compact TSOP II package: 66-TSSOP / 66-TSOP II packaging (0.400" / 10.16 mm width) minimizes board area while providing a conventional parallel DDR pinout.
• Datasheet-backed integration: Detailed functional descriptions, pin definitions, timing waveforms and electrical characteristics are available to support design and validation.

Why Choose W9425G6EH-5?

The W9425G6EH-5 positions itself as a documented, high-density parallel DDR SDRAM option for designs that require a 256 Mbit volatile memory device with well-defined timing and standard DDR command capabilities. Its 16M × 16 organization, 250 MHz clock specification, and explicit electrical/timing data make it suitable for engineers needing precise memory behavior for system integration.

With TSOP II packaging and a commercial temperature range, the device supports compact board layouts and mainstream operating environments. The availability of comprehensive datasheet content aids validation, timing analysis, and implementation for development and production cycles.

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