W9425G6JB-5 TR

The W9425G6JB-5 TR from Winbond Electronics is a 256 Mbit DDR SDRAM device organized as 16M × 16 with an internal architecture described as 4 M × 4 banks × 16 bits. It implements a parallel DDR memory interface and is specified for operation with a clock frequency of 200 MHz and an access time of 55 ns.

Packaged in a 60-TFBGA (8×13) footprint, the device operates from a 2.3 V to 2.7 V supply and is specified for ambient temperatures from 0°C to 70°C, making it suitable for designs that require a compact, parallel DDR memory component with known timing and power characteristics.

Key Features

• Memory architecture Organized as 16M × 16 with an internal configuration of 4 M × 4 banks × 16 bits, providing a defined DDR SDRAM banked structure and a total memory size of 256 Mbit.
• DDR SDRAM technology Implements DDR SDRAM operation as specified in the device documentation for parallel data transfers.
• Clock and timing Rated for a clock frequency of 200 MHz with an access time of 55 ns and a write cycle time (word/page) of 15 ns as listed in the specification set.
• Voltage supply Operates from a 2.3 V to 2.7 V supply range, matching sub-3V system rails.
• Package Supplied in a 60-TFBGA (8×13) package, suitable for board-level placement where a compact BGA footprint is required.
• Operating temperature Specified ambient operating range of 0°C to 70°C (TA).

Typical Applications

• Embedded memory expansion Use where a 256 Mbit parallel DDR SDRAM is required for system memory or frame/buffer storage.
• Digital system memory Fits designs that require a 16M × 16 DDR organization with multiple banks for predictable read/write sequencing.
• Board-level integration Suited for compact assemblies needing a 60-TFBGA footprint and a 2.3 V–2.7 V supply domain.

Unique Advantages

• Compact 60-TFBGA footprint: Minimizes PCB area while providing a full 256 Mbit DDR SDRAM function in an 8×13 BGA.
• Banked DDR organization: 4 M × 4 banks × 16 bits and 16M × 16 organization enable deterministic addressing and bank management as defined in the datasheet.
• Defined timing envelope: 200 MHz clock rating with documented access time (55 ns) and write cycle time (15 ns) for integration into timing-sensitive designs.
• Low-voltage compatibility: 2.3 V–2.7 V supply range supports systems with sub-3V power rails.
• Commercial temperature rating: Specified for 0°C–70°C ambient operation for standard commercial environments.

Why Choose IC DRAM 256MBIT PAR 60TFBGA?

The W9425G6JB-5 TR is positioned as a compact, parallel DDR SDRAM option from Winbond Electronics offering a clear specification set—256 Mbit capacity, 16M × 16 organization, 200 MHz clock rating, and documented timing parameters. Its 60-TFBGA package and 2.3 V–2.7 V supply make it suitable for board-level integration where space and rail compatibility are considerations.

This device is appropriate for designs that require a defined banked DDR architecture and verifiable timing characteristics. The published datasheet provides the detailed electrical and timing information required for system integration and validation.

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