W9412G6KH-5 TR

The W9412G6KH-5 TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with an SSTL_2 memory interface in a 66-TSSOP (66-TSOP II) package. It implements synchronous DDR SDRAM architecture (2M × 4 banks × 16 bits as documented in the datasheet) for board-level volatile memory applications.

Designed for systems requiring a compact, board-mount DDR memory solution, the device supports a 200 MHz clock frequency, a 2.3V–2.7V supply range, and standard DDR command and timing functionality as detailed in the Winbond datasheet (Rev A03).

Key Features

• Memory Architecture  128 Mbit DRAM organized as 8M × 16 with multiple internal banks (2M × 4 banks × 16 bits as documented), providing standard DDR SDRAM structure for burst access and banked operations.
• DDR SDRAM Technology  Synchronous DDR SDRAM device with standard DDR command set and functional blocks (activate, precharge, read, write, refresh, mode register operations) as described in the datasheet.
• Interface  SSTL_2 memory interface for DDR signaling compatibility; supports DDR signaling and timing conventions as specified in the device documentation.
• Performance  Clock frequency up to 200 MHz and an access time of 50 ns, with write cycle time (word/page) specified at 15 ns for timing-aware designs.
• Supply Voltage  Operates from 2.3 V to 2.7 V, enabling integration into systems using standard DDR supply rails.
• Package  66-TSSOP (0.400", 10.16 mm width) surface-mount package (66-TSOP II) for compact board-level mounting and standard assembly processes.
• Operating Temperature  Specified operating ambient temperature range of 0°C to 70°C (TA) for standard commercial environments.

Typical Applications

• Board-level DDR memory  Use as on-board volatile memory where a 128 Mbit DDR SDRAM in a 66-TSSOP footprint is required.
• System buffering and working memory  Suitable for designs needing synchronous DDR data buffering with SSTL_2 signaling and burst-read/write operations.
• Memory expansion for embedded systems  Fits compact PCBs that require a surface-mount DRAM device with standard DDR command/timing support.

Unique Advantages

• Compact surface-mount footprint: 66-TSSOP (66-TSOP II) package provides a space-efficient form factor for dense board layouts.
• SSTL_2 interface compatibility: Native SSTL_2 signaling support aligns with DDR interface requirements for controlled signaling environments.
• Documented DDR command and timing support: Datasheet (Rev A03) details power-up sequence, command set, mode registers, refresh, and timing waveforms to aid integration and validation.
• Standard DDR operating parameters: 200 MHz clock frequency support, 50 ns access time, and 15 ns write cycle time provide clear performance figures for system timing budgets.
• Wide commercial supply range: 2.3 V to 2.7 V supply compatibility supports common DDR power rails.

Why Choose IC DRAM 128MBIT SSTL2 66TSOP II?

The W9412G6KH-5 TR provides a documented DDR SDRAM solution in a compact 66-TSSOP package, offering clear electrical and timing parameters (200 MHz clock, 50 ns access time, 2.3–2.7 V supply) for system designers. Its SSTL_2 interface and standard DDR command/timing behavior make it suitable for board-level memory implementations requiring predictable DDR operation.

This device is appropriate for designs that need a 128 Mbit volatile DDR memory with available datasheet guidance (Winbond Rev A03) for power-up, command sequences, and timing integration. It delivers straightforward integration where package footprint, supply range, and timing specifications are primary selection criteria.

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