W9412G6KH-4

The W9412G6KH-4 is a 128 Mbit DDR SDRAM device from Winbond Electronics, organized as 8M × 16 and implemented as volatile DRAM. It provides synchronous DDR memory with an SSTL_2 memory interface in a compact 66-TSSOP / 66-TSOP II package.

Designed for systems that require synchronous DDR storage, the device offers a 250 MHz input clock frequency, a 2.4 V–2.7 V supply range, and timing characteristics suitable for burst read/write operations and standard DDR command sequences.

Key Features

• Memory Core  DDR SDRAM volatile memory, 128 Mbit total capacity organized as 8M × 16.
• Interface  SSTL_2 memory interface for signaling compatible designs.
• Performance & Timing  Clock frequency rated at 250 MHz, access time specified at 48 ns, and a write cycle time (word page) of 12 ns.
• Supply Voltage  Operates from a 2.4 V to 2.7 V supply range.
• Package  Available in a 66-TSSOP (0.400", 10.16 mm width) / 66-TSOP II package for compact board-level integration.
• Temperature Range  Specified operating ambient temperature range: 0°C to 70°C (TA).
• DDR Functional Support  Datasheet lists standard DDR command functions including Bank Activate, Precharge, Read, Write, Mode Register Set, Auto Refresh and Self Refresh.

Typical Applications

• System Memory  Volatile DDR storage for systems that require 128 Mbit synchronous memory with an SSTL_2 interface.
• FPGA / ASIC External Memory  External x16 DDR memory option for designs using SSTL_2 signaling and requiring compact TSOP packaging.
• Controller Buffering  Temporary data storage and buffering in controllers and memory subsystems where DDR timing and burst access are used.

Unique Advantages

• Compact 66-TSOP II footprint: Enables integration into space-constrained PCBs with a 0.400" (10.16 mm) width package.
• SSTL_2 signaling support: Matches designs that require SSTL_2 interface levels for DDR memory interconnects.
• DDR command support: Includes standard DDR command set (Mode Register Set, Auto Refresh, Self Refresh, etc.) as documented in the datasheet for predictable memory control.
• Deterministic timing: Published clock frequency (250 MHz), access time (48 ns), and write cycle timing (12 ns) facilitate timing analysis and system integration.
• Standard operating voltage: 2.4 V–2.7 V supply range aligns with common DDR power domains.

Why Choose W9412G6KH-4?

The W9412G6KH-4 positions itself as a straightforward 128 Mbit DDR SDRAM option for designs that require SSTL_2 signaling, defined timing parameters, and a compact 66-TSOP II package. Its documented DDR command support and published electrical/timing characteristics simplify system integration and timing validation.

This device is suitable for engineering teams and procurement looking for a verified DDR memory component with clear supply and temperature specifications, and compact board-level packaging for constrained layouts.

Request a quote or submit a parts inquiry to obtain pricing and availability information for the W9412G6KH-4.