W9412G6JB-5I TR

IC DRAM 128MBIT SSTL2 54TFBGA
Part Description

IC DRAM 128MBIT SSTL2 54TFBGA

Quantity 1,258 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size128 MbitAccess Time50 nsGradeIndustrial
Clock Frequency200 MHzVoltage2.7V ~ 2.3VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of W9412G6JB-5I TR – IC DRAM 128MBIT SSTL2 54TFBGA

The W9412G6JB-5I TR is a 128 Mbit DDR SDRAM device organized as 8M × 16 with a 54-TFBGA (8×8) package. It implements a DDR SDRAM architecture with an SSTL_2 memory interface and is supplied by Winbond Electronics.

Designed for board-level memory expansion, the device provides synchronous DDR operation at a 200 MHz clock rate and supports the standard DDR command set for read, write, refresh and power-management operations.

Key Features

  • Memory Architecture — 128 Mbit capacity organized as 8M × 16 (2M × 4 banks × 16 bits), delivering a x16 data width for DDR system designs.
  • DDR SDRAM Core — Synchronous DDR architecture with documented command set including Bank Activate, Precharge, Auto Refresh, Self Refresh and Power-Down modes.
  • Interface — SSTL_2 memory interface signaling; device-level support for DDR signaling conventions.
  • Performance — Rated for a 200 MHz input clock frequency with a reported access time of 50 ns and write cycle time (word page) of 15 ns.
  • Voltage — Operates from 2.7 V down to 2.3 V, matching SSTL_2 supply requirements.
  • Package — 54-TFBGA (8×8) ball grid array for compact board-level mounting.
  • Operating Temperature — Specified ambient range from −40 °C to 85 °C (TA) for broad thermal operating conditions.

Typical Applications

  • SSTL_2 interface memory slots — Use where SSTL_2 signaling compatibility is required on DDR memory channels.
  • Board-level DDR expansion — Provides 128 Mbit ×16 DRAM capacity for systems needing synchronous DDR storage in a compact BGA package.
  • Systems requiring standard DDR command support — Suitable for designs that use standard DDR operations such as auto-refresh, self-refresh and power-down sequencing.

Unique Advantages

  • Fixed x16 organization: Delivers a 16-bit data path that simplifies bus-width planning for DDR memory designs.
  • SSTL_2 compatibility: Operates with SSTL_2 signaling and a 2.3–2.7 V supply, aligning with common DDR board-level interface requirements.
  • Compact BGA footprint: The 54-TFBGA (8×8) package conserves PCB area while enabling reliable high-density mounting.
  • Documented DDR feature set: Datasheet includes command and timing details (mode registers, refresh, burst operation) to support system integration and timing closure.
  • Extended ambient range: Specified operation from −40 °C to 85 °C for use across wider environmental conditions.

Why Choose IC DRAM 128MBIT SSTL2 54TFBGA?

The W9412G6JB-5I TR positions itself as a compact, DDR SDRAM memory component for designs that require a 128 Mbit x16 device with SSTL_2 signaling. Its documented DDR command set and timing information support deterministic integration into synchronous memory subsystems.

This device is suitable for engineers and procurement teams specifying board-level DDR memory where a known supply voltage range (2.3–2.7 V), 200 MHz clock operation, and a 54-TFBGA package form factor are required. The Winbond datasheet provides the detailed command, timing and electrical characteristics needed for system design and verification.

If you need pricing or availability information or wish to request a quote for W9412G6JB-5I TR, submit a request for a quote or contact sales for further assistance.

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