W9412G6JB-5

The W9412G6JB-5 is a 128 Mbit DDR SDRAM device organized as 8M × 16 with four internal banks and an SSTL_2 memory interface. It is supplied in a 54-TFBGA (8×8) package and provides documented DDR timing and command behavior as described in the manufacturer’s datasheet.

This device is suited to board-level designs that require a 128 Mbit DDR DRAM with defined electrical and timing specifications (200 MHz clock rating, 50 ns access time) and explicit support for DDR features such as auto-refresh, self-refresh and programmable mode registers.

Key Features

• Memory Architecture — 128 Mbit DDR SDRAM organized as 8M × 16 with 4 banks (2M × 4 banks × 16 bits, per datasheet).
• Interface — SSTL_2 memory interface for DDR signaling.
• Clock and Timing — Rated clock frequency 200 MHz with an access time of 50 ns and a write cycle time (word/page) of 15 ns.
• Voltage — Operates from 2.3 V to 2.7 V supply.
• Package — 54-TFBGA (8×8) surface-mount BGA package (supplier device package: 54-TFBGA (8×8)).
• Temperature Range — Specified operating temperature 0°C to 70°C (TA).
• DDR Functional Controls — Supports mode register programming (burst length, CAS latency fields, DLL reset) and standard DDR commands including bank activate, precharge, read, write, auto-refresh, self-refresh, power-down and burst operations (detailed in the datasheet).

Typical Applications

• SSTL_2 DDR memory modules — For systems requiring a 128 Mbit DDR SDRAM with SSTL_2 signaling in a compact BGA footprint.
• Embedded memory expansion — Board-level memory expansion where an 8M × 16 DRAM organization is required.
• Designs using DDR command/control — Applications that utilize auto-refresh, self-refresh, power-down and programmable mode registers as specified in the device datasheet.

Unique Advantages

• Compact BGA integration: The 54-TFBGA (8×8) package provides a small surface-mount footprint for high-density boards.
• Documented DDR behavior: Detailed datasheet coverage of power-up sequence, command functions and timing waveforms aids predictable system implementation.
• Programmable mode registers: Burst length, CAS latency and DLL reset fields allow configuration to match target system timing requirements.
• Clear electrical bounds: Specified supply voltage (2.3 V–2.7 V) and operating temperature (0°C–70°C) simplify power and thermal planning.
• Comprehensive command support: Built-in support for standard DDR operations (read/write, precharge, refresh, power-down, self-refresh) as described in the datasheet enables full DDR memory control.

Why Choose IC DRAM 128MBIT SSTL2 54TFBGA?

The W9412G6JB-5 is positioned as a well-documented DDR SDRAM component that delivers a 128 Mbit capacity with an 8M × 16 organization and SSTL_2 interface in a 54-TFBGA package. Its published timing (200 MHz clock rating, 50 ns access time) and functional descriptions make it appropriate for designs that require explicit DDR command support and predictable memory timing.

This device is ideal for engineers specifying a compact, board-level DDR memory element that must conform to defined voltage and temperature ranges and leverage the detailed operational guidance provided in the manufacturer’s datasheet.

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