W9412G6JH-4

The W9412G6JH-4 is a 128 Mbit DDR SDRAM device from Winbond Electronics, organized as 8M × 16 and described in the datasheet as 2M × 4 banks × 16 bits. It implements DDR SDRAM architecture with an SSTL_2 memory interface and is provided in a 66-TSSOP (66-TSOP II) package.

Designed for systems requiring a volatile DDR memory component, the device supports a 250 MHz clock frequency, standard DDR command and mode register functionality, and operates from a 2.4 V to 2.7 V supply over an ambient range of 0°C to 70°C.

Key Features

• Memory Core & Organization 128 Mbit DRAM organized as 8M × 16 (documented as 2M × 4 banks × 16 bits), providing a conventional DDR banked architecture for row/column access.
• Performance Supports a clock frequency up to 250 MHz with an access time listed as 48 ns and a write cycle time (word/page) of 12 ns as specified.
• Interface SSTL_2 memory interface for integration with SSTL_2-compliant memory controllers.
• Power & Voltage Operates from a 2.4 V to 2.7 V supply range; includes documented power-up sequence and power-down modes in the datasheet.
• Package & Mounting Supplied in a 66-TSSOP (66-TSOP II, 0.400", 10.16 mm width) surface-mount package suitable for compact board layouts.
• Control & Functionality Datasheet details standard DDR command set and control features including bank activate, precharge, auto-refresh, self-refresh, mode register set and extended mode register set, burst operation and CAS latency configuration fields.
• Operating Range Ambient operating temperature specified as 0°C to 70°C (TA).

Unique Advantages

• Compact density in TSOP II: 128 Mbit capacity in a 66-TSSOP (66-TSOP II) package provides a balance of capacity and board-area efficiency where a surface-mount DRAM is required.
• SSTL_2 interface support: Native SSTL_2 signaling simplifies interface design with controllers specified for SSTL_2 operation.
• DDR feature set: Comprehensive DDR command and mode register support (including burst lengths and CAS latency fields) enables configurable timing and burst behavior as described in the datasheet.
• <strong_Wide supply tolerance for DDR: Operates across a 2.4 V–2.7 V supply window to match systems designed for standard DDR voltage rails.
• Documented timing and control: Detailed datasheet coverage of power-up sequence, refresh, timing waveforms and AC characteristics supports system-level integration and validation.

Why Choose W9412G6JH-4?

The W9412G6JH-4 positions as a straightforward DDR SDRAM building block for designs requiring 128 Mbit of volatile memory with an SSTL_2 interface, configurable mode registers and standard DDR control features. Its 66-TSSOP (TSOP II) package and documented electrical and timing characteristics make it appropriate for board-level implementations where the specified voltage, frequency and temperature envelopes match system requirements.

Backed by Winbond Electronics' product datasheet coverage—including command definitions, timing waveforms, and AC/DC characteristics—the device is suited to designs that need a documented DDR SDRAM component with explicit operating and timing parameters for integration and validation.

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