W9412G6KH-4 TR
| Part Description |
IC DRAM 128MBIT SSTL2 66TSOP II |
|---|---|
| Quantity | 1,147 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 48 ns | Grade | Commercial | ||
| Clock Frequency | 250 MHz | Voltage | 2.4V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | SSTL_2 | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of W9412G6KH-4 TR – IC DRAM 128MBIT SSTL2 66TSOP II
The W9412G6KH-4 TR is a 128 Mbit volatile DRAM device implemented in DDR SDRAM technology with an SSTL_2 memory interface. It is organized as 8M × 16 and specified to operate at up to a 250 MHz clock frequency.
This device provides defined timing and electrical characteristics—including a 48 ns access time, 12 ns write cycle time (word/page), and a 2.4 V–2.7 V supply range—suitable for designs that require a compact, SSTL_2-compatible DDR memory element within the stated thermal and voltage limits.
Key Features
- Memory Type & Architecture DDR SDRAM technology; volatile DRAM with a 128 Mbit capacity organized as 8M × 16.
- Performance Supports a clock frequency of 250 MHz, with a 48 ns access time and a 12 ns write cycle time (word/page).
- Interface SSTL_2 memory interface for compatible signaling requirements.
- Power Voltage supply range of 2.4 V to 2.7 V.
- Package & Mounting 66-TSSOP (66-TSOP II) surface-mount package, 0.400" (10.16 mm) width.
- Operating Conditions Specified ambient operating temperature range of 0°C to 70°C (TA).
Unique Advantages
- Compact TSOP II package: 66-TSSOP (0.400", 10.16 mm) footprint facilitates space-efficient PCB layouts.
- DDR SDRAM with SSTL_2 signaling: Provides synchronous DDR architecture with an SSTL_2 interface for systems designed to that signaling standard.
- Defined timing parameters: 250 MHz clock, 48 ns access time and 12 ns write cycle time supply predictable timing for memory subsystem design.
- Low-voltage operation: 2.4 V–2.7 V supply supports designs constrained to that voltage range.
- Straightforward memory mapping: 8M × 16 organization and 128 Mbit capacity simplify addressing and integration with compatible memory controllers.
Why Choose IC DRAM 128MBIT SSTL2 66TSOP II?
The W9412G6KH-4 TR combines DDR SDRAM architecture, an SSTL_2 interface and a compact 66-TSSOP package to deliver a 128 Mbit volatile memory option with clearly specified timing, voltage and temperature parameters. Its organization and electrical specifications make it appropriate for systems that require a defined SSTL_2 DDR memory element within the stated operating limits.
Choose this device when your design requires a space-efficient 128 Mbit DRAM with 8M × 16 organization, 250 MHz clock capability, and operation over 2.4 V–2.7 V and 0°C–70°C environments.
If you need pricing or availability, request a quote or submit an RFQ to receive detailed information and lead-time estimates for the W9412G6KH-4 TR.
