W9425G6KH-5I TR

The W9425G6KH-5I TR from Winbond Electronics is a 256 Mbit DDR SDRAM organized as 16M × 16 with 4 banks × 4 (per datasheet). It provides a parallel DDR interface designed for systems that require on-board volatile memory with controlled timing, burst operation and standard DDR command support.

Key device attributes include a 200 MHz input clock, low-voltage operation (2.3 V–2.7 V), and a compact 66-TSOP II (66-TSSOP, 10.16 mm width) package, making it suitable for space-constrained memory subsystems operating over an extended temperature range.

Key Features

• Memory Architecture 256 Mbit capacity organized as 16M × 16 with internal 4M × 4 banks × 16 bits as detailed in the datasheet.
• DDR SDRAM Technology DDR SDRAM device with parallel memory interface and support for standard DDR command types (bank activate, precharge, read/write, auto-precharge, auto-refresh, self-refresh, mode register operations).
• Performance 200 MHz clock frequency with an access time of 55 ns and a write cycle time (word/page) of 15 ns.
• Power Low-voltage supply range of 2.3 V to 2.7 V to support lower-power memory subsystems.
• Timing and Mode Control Mode and extended mode register support including fields for burst length, CAS latency and DLL reset as described in the datasheet.
• Package & Temperature Range Supplied in a 66-TSOP II (66-TSSOP, 0.400" / 10.16 mm width) package and specified for operation from –40°C to 85°C (TA).

Typical Applications

• Embedded memory subsystems — Provides parallel DDR storage for embedded designs requiring 256 Mbit volatile memory in a 66-TSOP II footprint.
• On-board system buffers — Suitable for applications that need burst-capable, banked DDR memory for temporary data buffering and working memory.
• Industrial and extended-temperature electronics — Operating range of –40°C to 85°C supports deployment in temperature-challenging environments.

Unique Advantages

• Parallel DDR interface at 200 MHz: Enables burst read/write operation with defined DDR timing for systems designed around a parallel memory bus.
• Compact 66-TSOP II package: Small-footprint 66-TSSOP package (10.16 mm width) helps reduce PCB area for space-constrained designs.
• Low-voltage operation (2.3 V–2.7 V): Supports lower supply rails to align with low-voltage system domains and reduce overall power draw.
• Comprehensive command and mode support: Built-in support for activate/precharge, auto-refresh, self-refresh, and mode register control provides flexible memory operation and power management options.
• Extended operating temperature: –40°C to 85°C rating allows use in a wide range of ambient conditions.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The W9425G6KH-5I TR is positioned for designs that require a 256 Mbit DDR SDRAM device with parallel interface timing, banked architecture and compact packaging. Its combination of 200 MHz clock operation, defined access and write cycle timings, and low-voltage supply make it suitable for memory subsystems where controlled DDR timing and a small footprint are important.

Engineers specifying this device can leverage the device’s mode/extended-mode register features and standard DDR command set to implement burst accesses, refresh management and power-down/self-refresh sequences as documented in the datasheet. The –40°C to 85°C operating range and 66-TSOP II package support deployments where space and temperature tolerance are design drivers.

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