W9464G6KH-4

The W9464G6KH-4 is a 64 Mbit DDR SDRAM device configured as 4M × 16 with a parallel memory interface. It implements DDR SDRAM architecture and is supplied in a 66‑TSSOP (66‑TSOP II) package.

Designed for applications that require a compact, low‑voltage DDR memory element, the device operates from 2.4 V to 2.7 V, supports up to a 250 MHz clock frequency, and specifies an access time of 55 ns and a write cycle time (word/page) of 15 ns.

Key Features

• Memory Type — DDR SDRAM: Synchronous Double Data Rate (DDR) SDRAM organized as 4M × 16, providing a 64 Mbit memory capacity.
• Performance: Supports up to 250 MHz clock frequency with an access time of 55 ns and a write cycle time (word/page) of 15 ns for predictable timing behavior.
• Voltage Range: Operates from 2.4 V to 2.7 V, enabling compatibility with low‑voltage DDR system designs.
• Package: Available in a 66‑TSSOP (0.400", 10.16 mm width) 66‑TSOP II mounting package for space‑constrained board layouts.
• Operating Temperature: Rated for 0°C to 70°C (TA), suitable for standard commercial temperature environments.
• Interface & Timing: Parallel memory interface with documented DDR command set and timing (mode register set, auto refresh, power‑down, self‑refresh) as detailed in the device datasheet.

Typical Applications

• Embedded Memory Subsystems — Provides 64 Mbit parallel DDR SDRAM in a compact TSOP II package for embedded boards requiring on‑board DDR memory.
• Data Buffering — Suitable for systems that need a parallel DDR memory bank for transient data storage and burst read/write operations.
• Consumer and Industrial Electronics — Fits designs constrained to commercial temperature ranges (0°C to 70°C) and low‑voltage DDR memory requirements.

Unique Advantages

• Compact TSOP II Package: The 66‑TSSOP (66‑TSOP II) package offers a small footprint (0.400" / 10.16 mm width) for dense PCB layouts and space‑sensitive designs.
• Low‑Voltage Operation: 2.4 V to 2.7 V supply range supports low‑voltage DDR system architectures while maintaining DDR timing behavior.
• DDR Performance at Moderate Clock Rates: Up to 250 MHz clock frequency with defined access and cycle times supports predictable burst read/write performance.
• Full DDR Command and Power Modes: Supports standard DDR SDRAM functions including mode register set, auto refresh, power down, and self refresh as specified in the datasheet.
• Clear Operating Range: Specified 0°C to 70°C ambient rating and detailed electrical/timing characteristics documented in the datasheet simplify system validation.

Why Choose IC DRAM 64MBIT PAR 66TSOP II?

The W9464G6KH-4 delivers a compact, low‑voltage DDR SDRAM option with a 64 Mbit capacity and a 4M × 16 organization for designs that require a parallel DDR memory element in a 66‑TSOP II footprint. Its documented timing (250 MHz clock support, 55 ns access time, 15 ns write cycle time) and DDR command set support make it suitable for applications needing defined burst read/write behavior and conventional DDR power modes.

This device is well suited to engineers and procurement teams targeting commercial‑temperature, low‑voltage DDR memory integration where board space and predictable electrical/timing specifications are priorities. The accompanying datasheet provides detailed electrical, timing and functional descriptions to support system integration and validation.

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