W9464G6KH-5I

The W9464G6KH-5I from Winbond Electronics is a 64 Mbit DDR SDRAM organized as 4M × 16 with internal bank architecture. It implements a parallel memory interface and is specified for 200 MHz clock operation, providing a compact DDR DRAM option in a 66-TSOP II package.

Key technical characteristics include a 2.3 V–2.7 V supply range, an operating temperature range of -40°C to 85°C, and timing characteristics such as 55 ns access time and a 15 ns write cycle time, making it suitable for designs that require a discrete 64 Mbit parallel DDR memory device.

Key Features

• Memory Architecture 1M × 4 banks × 16 bits DDR SDRAM organization (4M × 16 logical organization listed as MemoryOrganization).
• Density 64 Mbit total memory capacity in DRAM format.
• Interface Parallel memory interface (MemoryInterface: Parallel) for direct integration into parallel DDR memory buses.
• Performance Clock frequency up to 200 MHz and an access time of 55 ns; write cycle time (word/page) specified at 15 ns.
• Power Supply Operates from a 2.3 V to 2.7 V supply range, suitable for 2.5 V-class DDR systems.
• Package & Mounting Available in 66-TSSOP / 66-TSOP II (0.400", 10.16 mm width) package for surface-mount PCB designs.
• Temperature Range Industrial-grade operating temperature range of -40°C to 85°C (TA).
• DDR Command Set & Timing Datasheet documents standard DDR command functions, mode register operations, refresh, power-down and timing waveforms for design integration.

Typical Applications

• Board-level Memory Expansion Used as a discrete 64 Mbit DDR SDRAM device for systems requiring parallel DRAM memory modules.
• Embedded Systems Integration in embedded designs that specify a 4M × 16 DDR memory with a 200 MHz clock and industrial operating temperature range.
• Buffering and Scratch Memory Suitable where a compact parallel DDR DRAM is needed for temporary data storage and buffering functions.

Unique Advantages

• Compact TSOP II Package: 66-TSSOP / 66-TSOP II package (0.400", 10.16 mm width) minimizes PCB footprint while supporting x16 organization.
• Industry-Grade Temperature Range: Rated for -40°C to 85°C operation, enabling use in a wide range of environmental conditions.
• 2.3 V–2.7 V Supply Compatibility: Supports 2.5 V-class power rails common in DDR designs, simplifying power supply planning.
• Documented DDR Operation: Datasheet includes detailed command descriptions, register operations, refresh and timing waveforms to support accurate timing implementation.
• Deterministic Timing Specs: Clear electrical and timing parameters such as 200 MHz clock frequency, 55 ns access time, and 15 ns write cycle time for timing budget and margin calculations.

Why Choose W9464G6KH-5I?

The W9464G6KH-5I provides a clearly specified 64 Mbit DDR SDRAM option with parallel x16 organization, a documented DDR command and timing set, and a compact 66-TSOP II package. Its operating range and voltage compatibility make it a practical choice for engineers who need a discrete DRAM device with predictable electrical and timing characteristics.

This device is suited to designs that require a 64 Mbit parallel DDR memory element with defined timing parameters and industrial temperature operation, and it is supported by a detailed datasheet covering commands, mode registers, and timing waveforms to aid system integration and validation.

Request a quote or submit a procurement inquiry to receive pricing and availability information for the W9464G6KH-5I from Winbond Electronics.