W9751G6IB-25

The W9751G6IB-25 is a 512 Mbit DDR2 SDRAM organized as 32M x 16 with an internal architecture documented as 8M × 4 banks × 16 bit. It implements a parallel memory interface and is built for systems that require volatile high-density DDR2 system memory.

This device supports DDR2 operation at a clock frequency of 400 MHz with a specified access time of 55 ns and a write cycle time (word page) of 15 ns. It operates from a 1.7 V to 1.9 V supply and is offered in an 84-ball WBGA package (84-TFBGA / 84-WBGA, 8 × 12.5 mm footprint) for compact board-level integration.

Key Features

• Memory Core  512 Mbit DDR2 SDRAM organized as 32M × 16 (internally 8M × 4 banks × 16 bit) for high-density volatile storage.
• Performance  Designed for a 400 MHz clock frequency with a typical access time of 55 ns and a word-page write cycle time of 15 ns.
• Interface  Parallel DDR2 memory interface supporting standard DDR2 command and burst operations as described in the device functional documentation.
• Power  Low-voltage operation with a supply range of 1.7 V to 1.9 V to support DDR2 system power budgets.
• On-die Features & Configuration  Device documentation includes Mode Register Set (MRS) and Extended Mode Registers (EMRS) operation, DLL enable/disable, on-die termination (ODT), and OCD impedance adjustment options.
• Package  84-ball WBGA (84-TFBGA / 84-WBGA) package (8 × 12.5 mm) for space-efficient mounting.
• Operating Range  Commercial temperature operation specified from 0°C to 85°C (TC).

Typical Applications

• System memory for embedded platforms  Use as parallel DDR2 volatile memory where 512 Mbit density and DDR2 timing are required.
• Consumer and compact electronics  Integrates into compact PCB designs via the 84-WBGA package to provide on-board DDR2 storage.
• Networking and communications modules  Provides parallel DDR2 memory capacity for buffering and temporary data storage in module-level designs.

Unique Advantages

• High-density DDR2 storage: 512 Mbit capacity (32M × 16) offers substantial volatile storage while maintaining a compact package footprint.
• DDR2 performance at 400 MHz: Supports a 400 MHz clock and documented 55 ns access time for predictable timing in DDR2 designs.
• Low-voltage operation: 1.7 V to 1.9 V supply range helps align with DDR2 system power rails and lower power budgets.
• Configurable on-die options: Mode register and extended mode support (including DLL control, ODT, and OCD impedance adjustment) enables tuning for board-level signal and termination requirements.
• Compact WBGA package: 84-ball WBGA (8 × 12.5 mm) supports dense board layouts and surface-mount assembly.
• Commercial temperature rating: Rated for 0°C to 85°C operation for standard commercial environments.

Why Choose W9751G6IB-25?

The W9751G6IB-25 positions itself as a straightforward, high-density DDR2 SDRAM device for designs that require 512 Mbit parallel volatile memory with DDR2 timing. Its combination of 32M × 16 organization, 400 MHz clock capability, and built-in mode/termination configuration options supports reliable integration into systems that need predictable DDR2 behavior.

This device is suitable for engineers and procurement teams targeting compact board-level memory solutions that balance density, configurable on-die features, and a low-voltage DDR2 supply range. The 84-WBGA package and commercial temperature rating make it appropriate for space-constrained assemblies in standard commercial environments.

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