W9751G6KB-25 TR

IC DRAM 512MBIT PARALLEL 84WBGA
Part Description

IC DRAM 512MBIT PARALLEL 84WBGA

Quantity 368 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package84-WBGA (8x12.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time57.5 nsGradeCommercial (Extended)
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging84-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of W9751G6KB-25 TR – IC DRAM 512MBIT PARALLEL 84WBGA

The W9751G6KB-25 TR is a 512 Mbit DDR2 SDRAM device organized as 32M × 16 with an 8M × 4 banks × 16 bit architecture. It provides a parallel memory interface in an 84-WBGA (8 × 12.5 mm) package and is specified for 1.7 V to 1.9 V supply operation and an operating temperature range of 0°C to 85°C.

Designed for applications that require standard DDR2 synchronous DRAM behavior, the device documentation includes detailed support for mode register programming, on-die termination (ODT), DLL control, extended mode registers (EMR), refresh, power-down and self-refresh sequences, and impedance adjustment routines to assist system memory integration.

Key Features

  • Memory Core — 512 Mbit DDR2 SDRAM organized as 32M × 16 (8M × 4 banks × 16 bit) to provide parallel DDR2 memory architecture and banked operation.
  • Performance — Operates with a clock frequency up to 400 MHz and specified access time of 57.5 ns; supports DDR2 burst and posted CAS/burst modes as described in the device functional documentation.
  • Voltage and Timing — Specified supply voltage range of 1.7 V to 1.9 V and a write cycle time (word page) of 15 ns, with comprehensive AC timing and command operation tables in the datasheet.
  • On-Chip Control and Configuration — Datasheet details include Mode Register Set (MRS), Extended Mode Registers (EMR), DLL enable/disable, On-Die Termination (ODT), and Off-Chip Driver (OCD) impedance adjustment for runtime configuration and signal integrity tuning.
  • Power Management — Functional descriptions cover power-up/initialization, refresh, power-down, and self-refresh modes to support controlled low-power and retention behaviors.
  • Package — 84-TFBGA / 84-WBGA (8 × 12.5 mm) package case suitable for surface-mount assembly with ball configuration and pin descriptions provided in the documentation.
  • Operating Range — Specified operating temperature condition of 0°C to 85°C as provided in the product specifications and datasheet.

Typical Applications

  • Embedded memory subsystems — Use as a 512 Mbit parallel DDR2 memory device in embedded designs requiring banked DDR2 SDRAM and documented mode register control.
  • Board-level DRAM modules — Integration into custom memory modules or carrier boards where an 84-WBGA footprint and 1.7 V–1.9 V DDR2 operation are required.
  • System memory for synchronous designs — Implement as parallel DDR2 SDRAM for systems that leverage burst read/write and posted CAS features documented in the device specification.

Unique Advantages

  • Banked DDR2 architecture: 8M × 4 banks × 16 bit organization enables standard DDR2 banked operations as documented for efficient burst access patterns.
  • Configurable termination and drivers: Includes documented ODT and OCD impedance adjustment and extended mode registers for tuning signal integrity on populated systems.
  • Compact WBGA package: 84-ball WBGA (8 × 12.5 mm) package minimizes PCB footprint while providing a defined ball configuration and placement information in the datasheet.
  • Comprehensive control sequencing: Datasheet provides detailed power-up/initialization, refresh, power-down and self-refresh sequences that support predictable memory behavior in system designs.
  • Tight supply and timing specification: Operation at 1.7 V–1.9 V with specified clock frequency and timing parameters aids deterministic design and validation against the provided AC/DC characteristics.

Why Choose W9751G6KB-25 TR?

The W9751G6KB-25 TR is positioned as a standardized DDR2 SDRAM component offering a 512 Mbit density in a 32M × 16 organization with documented mode, timing, and termination controls. Its datasheet includes detailed electrical and timing characteristics, command sequences, and configuration options (MRS/EMR, ODT, DLL, OCD) to support integration into synchronous memory subsystems.

This device is appropriate for designers and procurement teams specifying a parallel DDR2 memory device with defined supply range (1.7 V–1.9 V), 0°C–85°C operating temperature, and a compact 84-WBGA package where detailed configuration and signal integrity controls are required for board-level integration.

If you require pricing or availability details or want to request a formal quote for W9751G6KB-25 TR, please submit a request for a quote or contact our sales channel to discuss your project requirements.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up