W9751G6KB25I TR

The W9751G6KB25I TR is a 512 Mbit DDR2 SDRAM device in an 84-ball WBGA package. It implements a parallel DDR2 architecture with an organization described as 8M × 4 banks × 16‑bit (32M × 16 logical organization), intended for systems requiring standard DDR2 memory capacity and timing control.

This device targets embedded and electronic designs that require volatile DRAM storage with documented timing, power and configuration controls. Key attributes include a 400 MHz clock rating, low-voltage operation, and a wide operating temperature range suitable for temperature‑constrained environments.

Key Features

• DDR2 SDRAM Core Parallel DDR2 architecture with 8M × 4 banks × 16‑bit organization (32M × 16 logical) and 512 Mbit total capacity.
• Performance & Timing Rated for a 400 MHz clock frequency with an access time of 57.5 ns and a write cycle time (word page) of 15 ns; detailed AC timing and waveforms are provided in the datasheet.
• Voltage Low‑voltage supply range of 1.7 V to 1.9 V, matching DDR2 low‑voltage operation requirements.
• Package Available in an 84‑ball TFBGA/WBGA package (84‑WBGA, 8 × 12.5 mm footprint) for compact board mounting.
• Temperature Range Operating temperature range of −40 °C to 95 °C (TC) for extended environmental operation.
• Configuration & Control Supports Mode Register Set (MRS) and multiple Extended Mode Registers (EMRS) including DLL control, On‑Die Termination (ODT), and Off‑Chip Driver (OCD) impedance adjustment per the device documentation.
• Power Management Includes documented power‑down and self‑refresh operation modes and related timing sequences described in the datasheet.
• Comprehensive Documentation Datasheet provides command sets (activate, read, write, precharge, refresh), detailed electrical characteristics, timing tables and waveforms for system integration.

Typical Applications

• Embedded Systems Use as parallel DDR2 DRAM for embedded processors and controllers requiring 512 Mbit volatile memory and documented timing control.
• Consumer Electronics Memory buffer or working memory in consumer devices that implement standard DDR2 parallel interfaces.
• Networking & Communications Equipment Packet buffering and temporary data storage where parallel DDR2 memory is specified.
• Industrial Electronics Applications that benefit from the −40 °C to 95 °C operating range and compact WBGA package for space‑constrained boards.

Unique Advantages

• Standard DDR2 Architecture: Parallel DDR2 implementation with 8M × 4 banks × 16‑bit organization provides a familiar memory profile for systems designed around DDR2 specifications.
• Low‑Voltage Operation: 1.7 V to 1.9 V supply range supports low‑voltage DDR2 power domains and can help reduce overall system power draw compared with higher‑voltage memories.
• Compact WBGA Package: 84‑ball WBGA (8 × 12.5 mm) reduces PCB area while providing the required ballout for parallel DDR2 routing.
• Extended Temperature Range: −40 °C to 95 °C operating range supports deployment in thermally demanding environments.
• Detailed Configuration Controls: Mode registers, EMRS, ODT and OCD impedance adjustment give designers granular control over timing, termination and drive characteristics for signal integrity tuning.
• Complete Datasheet Support: Comprehensive documentation of commands, timing waveforms and electrical characteristics facilitates accurate system integration and validation.

Why Choose W9751G6KB25I TR?

The W9751G6KB25I TR positions itself as a practical DDR2 SDRAM option for designs requiring 512 Mbit of parallel volatile memory in a compact WBGA footprint. With a 400 MHz clock rating, low‑voltage supply range and detailed register and timing control documented in the datasheet, the device is suitable for engineers who need explicit electrical and timing specifications for integration.

This part is appropriate for designers targeting embedded, consumer or industrial applications that rely on standard DDR2 command and timing behavior, require on‑die termination and impedance configuration, and need a device with a verified operating temperature window and documented electrical characteristics.

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