W9751G6NB-18 TR

The W9751G6NB-18 TR is a 512 Mbit DDR2 SDRAM device with a parallel memory interface in an 84-ball VFBGA package. It implements a 32M × 16 memory organization and an internal architecture described as 8M × 4 banks × 16 bit.

Designed for systems that require DDR2-class volatile memory at a 533 MHz clock rate, the device offers standard DDR2 control features and documented electrical and timing characteristics in the manufacturer datasheet. Key hardware attributes include a compact 84-VFBGA (8 × 12.5 mm) package, 1.7 V–1.9 V supply range, and a commercial operating temperature of 0 °C to 85 °C.

Key Features

• Memory Core: 512 Mbit DDR2 SDRAM organized as 32M × 16 with an internal architecture noted as 8M × 4 banks × 16 bit, providing parallel DRAM storage.
• Performance: Supports a clock frequency of 533 MHz and an access time of 58.13 ns; write cycle time (word page) specified at 15 ns for timing-sensitive designs.
• Voltage and Power: Operates from a 1.7 V to 1.9 V supply range consistent with DDR2 power domains.
• Package: 84-VFBGA (8 × 12.5 mm) BGA footprint for compact board-level integration.
• Memory Interface: Parallel DRAM interface with DDR2 command and control support described in the datasheet (Mode Register Set, Extended Mode Registers, read/write/burst commands).
• On-die Control and Modes: Datasheet documents features such as Mode Register and Extended Mode Registers (MRS/EMRS), DLL enable/disable, On-Die Termination (ODT), off-chip driver (OCD) impedance adjustment, self-refresh and power-down modes, and refresh operation commands.
• Operating Range: Commercial temperature rating of 0 °C to 85 °C suitable for standard environment deployments.

Typical Applications

• DDR2 system memory: Use as parallel DRAM storage in designs requiring 512 Mbit DDR2 memory and standard DDR2 command/control support.
• Memory expansion modules: Suitable for board-level memory expansion where a compact 84-VFBGA footprint and 16-bit data bus are required.
• Timing-sensitive designs: Applicable in systems that require documented access times, write cycle timing, and defined electrical/ac characteristics for integration and verification.

Unique Advantages

• High-density DDR2 memory: 512 Mbit capacity in a single device reduces component count for mid-density memory requirements.
• Documented DDR2 control features: Mode registers, EMRS, ODT, DLL control and refresh/power modes are detailed in the datasheet to support integration and initialization.
• Compact BGA package: 84-VFBGA (8 × 12.5 mm) enables space-efficient board layouts where footprint is constrained.
• Low-voltage operation: 1.7 V–1.9 V supply range aligns with DDR2 power domains to support standard power architectures.
• Defined timing and electrical data: Access time (58.13 ns), clock frequency (533 MHz) and write cycle timing (15 ns) provide clear parameters for timing closure and system validation.
• Commercial temperature coverage: Rated 0 °C to 85 °C for designs operating in typical commercial environments.

Why Choose W9751G6NB-18 TR?

The W9751G6NB-18 TR provides a documented DDR2 SDRAM option with 512 Mbit density, a 16-bit parallel interface, and a compact 84-ball VFBGA package. Its published electrical characteristics, command set support (MRS/EMRS, ODT, DLL controls), and timing data facilitate predictable integration and validation in DDR2-based designs.

This device is suited to engineers seeking a mid-density DDR2 memory component with clear timing and mode-control documentation for board-level implementation. The manufacturer-provided datasheet contains detailed operation modes, AC/DC characteristics, command timing, and initialization sequences to support design and test activities.

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