W9751G6NB-25

The W9751G6NB-25 is a 512 Mbit DDR2 SDRAM organized as 32M × 16 with an 8M × 4 banks × 16-bit architecture. It provides a parallel DDR2 memory interface in an 84-VFBGA package for designs that require synchronous DRAM with on-die features exposed in the device documentation.

Key electrical and timing characteristics include a 400 MHz clock frequency, 1.7 V–1.9 V supply range, 57.5 ns access time, and an operating temperature range of 0°C to 85°C. The device datasheet documents mode register control, on-die termination (ODT), DLL enable/disable, and refresh/power-management sequences.

Key Features

• DDR2 SDRAM Core  Synchronous DDR2 architecture with detailed mode register and extended mode register operations described in the datasheet (including MRS and EMRS commands).
• Memory Organization  32M × 16 organization presented as 8M × 4 banks × 16 bits, yielding a total density of 512 Mbit.
• High‑speed Operation  Supports a clock frequency of 400 MHz and documented AC timing parameters for the -25 speed grade.
• Timing and Access  Specified access time of 57.5 ns and write cycle time (word page) of 15 ns with full command set timing and waveforms provided.
• Low‑Voltage Supply  Nominal supply range from 1.7 V to 1.9 V for DDR2 operation.
• On‑die Control Features  Datasheet includes on-die termination (ODT), off-chip driver (OCD) impedance adjustment, DLL enable/disable, and related timing requirements.
• Package  84‑VFBGA package (8 × 12.5 mm) for compact mounting and board-level integration.
• Operating Conditions  Specified commercial temperature range of 0°C to 85°C and full electrical/AC characteristic tables in the documentation.

Unique Advantages

• Deterministic DDR2 interface: The parallel DDR2 architecture and comprehensive command/timing definitions enable predictable memory timing integration for synchronous systems.
• Compact BGA footprint: The 84‑VFBGA (8 × 12.5 mm) package offers a space-efficient mounting option for board-level designs requiring DRAM density.
• Low-voltage operation: 1.7 V–1.9 V supply range reduces bus power compared with higher-voltage memory options while matching DDR2 power domains.
• On-die termination and impedance control: ODT and OCD impedance adjustment options documented in the datasheet help optimize signal integrity and PCB design margins.
• Comprehensive documentation: Detailed datasheet content covers mode register programming, refresh and power‑down sequences, and AC/DC characteristics to support integration and validation.
• Full timing visibility: AC characteristics, timing waveforms, and command function descriptions are provided to support accurate timing closure and system-level validation.

Why Choose W9751G6NB-25?

The W9751G6NB-25 positions itself as a standard DDR2 parallel DRAM device offering 512 Mbit density, documented timing for the -25 speed grade, and on-die features such as ODT and DLL control. Its combination of 400 MHz clock support, 1.7 V–1.9 V operation, and an 84‑VFBGA package make it well suited for designs that require a compact, documented DDR2 memory component with explicit command, timing, and electrical behavior available in the datasheet.

Design teams integrating the W9751G6NB-25 gain access to detailed operational sequences (power-up/initialization, mode register programming, refresh, and power‑down), AC/DC characteristic tables, and timing waveforms to aid system validation and board-level implementation.

If you need pricing, availability, or a formal quote for W9751G6NB-25, request a quote or contact sales to discuss availability and ordering details.