W9751G6NB-18

The W9751G6NB-18 is a volatile DDR2 SDRAM device providing 512 Mbit organized as 32M × 16 with a parallel memory interface. It implements DDR2 architecture with standard DDR2 command and timing behavior described in the device documentation.

Key electrical and mechanical characteristics include a 533 MHz clock interface, 1.7 V–1.9 V supply range, 58.13 ns access time, and an 84‑ball VFBGA package (8 × 12.5). The device supports DDR2 features for memory control and power management as documented in the datasheet.

Key Features

• Memory Type & Architecture 512 Mbit DDR2 SDRAM organized as 32M × 16 with internal bank structure and parallel data interface.
• Performance Supports a 533 MHz clock frequency and lists an access time of 58.13 ns and a write cycle time (word/page) of 15 ns.
• Voltage & Power Operates from 1.7 V to 1.9 V and includes documented power modes such as power-down and self-refresh in the device functional description.
• DDR2 Command & Register Support Implements Mode Register Set (MRS), Extended Mode Registers (EMRS), DLL enable/disable and related command functionality as described in the datasheet.
• On-Die/Driver Control Includes On-Die Termination (ODT) and Off-Chip Driver (OCD) impedance adjustment features with associated timing and register controls detailed in the documentation.
• Package & Mounting Supplied in an 84‑VFBGA package (8 × 12.5 mm), suitable for BGA surface-mount integration.
• Operating Temperature Rated for operation from 0 °C to 85 °C (TC) as specified in the product specifications.

Unique Advantages

• High-density DDR2 memory: 512 Mbit capacity enables higher on-board memory density in compact systems.
• Standard DDR2 feature set: Support for MRS/EMRS, ODT, OCD and DLL control provides the expected control and tuning options for system designers.
• Performance balance: 533 MHz clock support with documented access and write cycle timings offers predictable timing for memory subsystem design.
• Compact BGA package: 84‑VFBGA (8 × 12.5) package helps conserve PCB area while supporting BGA mounting.
• Documented power modes: Self-refresh and power-down operation are specified for low-activity power management.
• Manufacturer-provided specification set: Detailed functional and electrical characteristics are available in the device datasheet for integration and validation.

Why Choose IC DRAM 512MBIT PAR 84VFBGA?

The W9751G6NB-18 combines a 512 Mbit DDR2 architecture with documented DDR2 control features and power modes, offering a clear specification set for system integration. Its electrical parameters—1.7 V–1.9 V supply, 533 MHz clock capability, and defined timing values—allow designers to plan memory subsystems with measurable characteristics.

Manufactured by Winbond Electronics and supplied in an 84‑VFBGA package, this DDR2 SDRAM is suitable for designs requiring a compact, high-density parallel DDR2 memory device with standard DDR2 register and termination controls and defined operating-temperature and power conditions.

If you need a formal quote or further technical information about the W9751G6NB-18, submit a request for a quote or contact sales to start the inquiry.