W9751G8KB-25

The W9751G8KB-25 is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface. It implements DDR2 architecture and supports synchronous command and data timing suitable for systems requiring off-chip dynamic memory.

Key device characteristics include a 400 MHz clock frequency, 1.7 V–1.9 V supply range, a 60‑TFBGA (60‑WBGA, 8×12.5) package, and an operating temperature window of 0°C to 85°C. The device datasheet documents detailed control features such as mode registers, on-die termination, DLL control and power management modes.

Key Features

• Memory Architecture  512 Mbit DDR2 SDRAM organized as 64M × 8 (16M × 4 banks × 8 bit) supporting standard DDR2 bank and burst operations.
• Performance & Timing  Rated for a 400 MHz input clock with an access time listed at 57.5 ns and a write cycle time (word page) of 15 ns; AC timing parameters and waveforms are defined in the datasheet.
• Power  Low-voltage operation with a supply range of 1.7 V to 1.9 V; datasheet includes IDD measurement conditions and power-down/self-refresh modes.
• Package  60‑TFBGA (60‑WBGA, 8×12.5) supplier device package offering a compact footprint for board-level integration.
• Operating Temperature  Specified for commercial operating conditions from 0°C to 85°C (TC).
• Control & Memory Functions  Datasheet describes Mode Register Set (MRS), Extended Mode Registers (EMRS), DLL enable/disable, On-Die Termination (ODT), Off-Chip Driver (OCD) impedance adjust, burst read/write and auto-precharge operations.
• Interface  Parallel DDR2 interface with defined command truth tables, clock enable behavior, data mask handling and burst modes as documented in the datasheet.

Unique Advantages

• Compact WBGA footprint: 60‑TFBGA (8×12.5) package minimizes board area for space-constrained applications while providing the full DDR2 feature set.
• Defined DDR2 control features: Mode registers, EMRS, ODT and DLL controls in the datasheet enable tailored timing, termination and signal integrity adjustments for system-level tuning.
• Low-voltage operation: 1.7 V–1.9 V supply range supports lower system rail voltages and is specified in the device electrical characteristics.
• Comprehensive timing documentation: AC characteristics, timing waveforms and command sequences are provided in the datasheet to support accurate memory subsystem design and validation.
• Power management modes: Self-refresh and power-down modes are described in the datasheet to help manage standby power in memory subsystems.

Why Choose W9751G8KB-25?

The W9751G8KB-25 is positioned for designs that require a 512 Mbit DDR2 SDRAM device with a parallel interface, compact 60‑WBGA packaging, and well-documented control and timing features. Its combination of 400 MHz clock capability, low-voltage operation and datasheet-defined mode and termination controls provides the data necessary for integration into systems that rely on precise memory timing and configuration.

The included electrical and AC timing specifications, power management details and package information make this device suitable for projects and teams that need traceable, datasheet-driven memory components for board-level design and validation.

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