W9751G8NB-25

IC DRAM 512MBIT PAR 60VFBGA
Part Description

IC DRAM 512MBIT PAR 60VFBGA

Quantity 1,303 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package60-VFBGA (8x9.5)Memory FormatDRAMTechnologySDRAM - DDR2
Memory Size512 MbitAccess Time57.5 nsGradeCommercial (Extended)
Clock Frequency400 MHzVoltage1.7V ~ 1.9VMemory TypeVolatile
Operating Temperature0°C ~ 85°C (TC)Write Cycle Time Word Page15 nsPackaging60-VFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of W9751G8NB-25 – IC DRAM 512Mbit PAR 60VFBGA

The W9751G8NB-25 is a 512 Mbit DDR2 SDRAM device in a 60-ball VFBGA package. It implements a 64M × 8 memory organization and a 16M × 4 banks × 8-bit internal architecture to provide parallel DDR2 system memory.

Designed for systems that require parallel DDR2 memory operation, the device supports a 400 MHz clock rate, standard DDR2 command and configuration functions, and operational features described in the device datasheet such as mode registers, on-die termination and power-down/self-refresh modes.

Key Features

  • Memory Type & Architecture DDR2 SDRAM with 512 Mbit capacity implemented as 64M × 8 and organized as 16M × 4 banks × 8-bit for parallel memory interfaces.
  • Performance Supports a clock frequency up to 400 MHz with an access time of 57.5 ns and a write cycle time (word/page) of 15 ns.
  • Voltage & Power Operates from a 1.7 V to 1.9 V supply; includes standard DDR2 power modes such as power-down and self-refresh described in the datasheet.
  • Command and Control Full DDR2 command set and mode register functions including Mode Register Set (MRS), Extended Mode Registers (EMRS), DLL enable/disable, and on-die termination (ODT) controls as documented in the datasheet.
  • Timing and Reliability Features Supports burst read/write operations, auto-precharge, refresh sequences and ODT timing controls per the provided electrical and timing specifications.
  • Package 60-ball VFBGA package (8 × 9.5 mm footprint) for compact board-level mounting.
  • Operating Temperature Specified operating temperature range of 0°C to 85°C (TC).

Unique Advantages

  • Standard DDR2 Interface: Provides a parallel DDR2 SDRAM interface with defined Mode Register and EMR controls, easing integration into DDR2-compatible designs.
  • Balanced Performance and Capacity: 512 Mbit density with 400 MHz clock support delivers a clear capacity/performance point for systems requiring mid-density DDR2 memory.
  • Power Mode Support: Built-in power-down and self-refresh features reduce power during idle periods in systems that implement these modes.
  • On-Die Termination and DLL Control: ODT and DLL configuration options in EMR allow designers to tune signal integrity and timing behavior per board-level requirements.
  • Compact BGA Packaging: The 60-VFBGA (8 × 9.5 mm) package supports space-constrained board layouts while maintaining standard DDR2 connectivity.

Why Choose W9751G8NB-25?

The W9751G8NB-25 offers a defined DDR2 SDRAM solution with 512 Mbit density, conventional parallel DDR2 controls, and timing capabilities documented in the datasheet. Its combination of 64M × 8 organization, 16M × 4-bank architecture, 400 MHz clock support and ODT/DLL configuration options makes it suitable for designs that require standard DDR2 memory behavior in a compact VFBGA footprint.

Designed for engineers and procurement teams seeking an established DDR2 memory building block, the W9751G8NB-25 provides verifiable electrical, timing and operational details (including mode registers, refresh, power-down and ODT timing) to support system integration and validation.

Request a quote or submit an inquiry to obtain pricing, availability and additional ordering information for the W9751G8NB-25.

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