W9812G2KB-6

The W9812G2KB-6 is a high-speed volatile SDRAM device organized as 1M words × 4 banks × 32 bits for a total of 128 Mbit. It provides a parallel SDRAM interface and delivers data bandwidth up to 166M words per second with a rated clock frequency of 166 MHz.

Designed for systems that require burst-oriented memory access and a compact BGA footprint, the device supports a 3.0 V to 3.6 V supply range and operates over a 0°C to 70°C ambient temperature range (TA).

Key Features

• Memory Architecture Organized as 1M × 4 banks × 32 bits (4M × 32), totaling 128 Mbit of volatile SDRAM.
• High-Speed Operation Supports a clock frequency of 166 MHz and delivers up to 166M words per second data bandwidth; access time specified at 5 ns.
• Burst-Oriented Access Supports burst accesses with selectable burst lengths of 1, 2, 4, 8 or full-page operation for efficient sequential transfers.
• Bank and Command Features Four-bank architecture with support for bank activate, auto-precharge, precharge, burst stop, self-refresh and power-down commands as detailed in the device functional description.
• Parallel SDRAM Interface Standard parallel memory interface for straightforward integration into systems that use synchronous DRAM signaling.
• Power and Supply Operates from a 3.0 V to 3.6 V supply range suitable for common 3.3 V systems.
• Package Supplied in a 90-TFBGA (8 × 13) package for compact board-level implementation.
• Operating Temperature Specified for ambient operation from 0°C to 70°C (TA) for the -6 grade part.

Typical Applications

• Personal computer memory systems Suited for designs targeting personal computer industry standards that require parallel SDRAM modules with 128 Mbit capacity.
• Parallel SDRAM-based systems Useful in any system architecture that uses a parallel SDRAM interface and benefits from burst-oriented data transfers.
• Compact board-level memory The 90-TFBGA package is appropriate for space-constrained PCB layouts where a surface-mounted SDRAM is needed.

Unique Advantages

• Consistent high throughput: 166 MHz clock rating and up to 166M words/s bandwidth support sustained data transfer for burst operations.
• Flexible burst modes: Multiple burst-length options (1, 2, 4, 8, full page) enable designers to optimize transfer granularity and latency for target workloads.
• Comprehensive SDRAM command set: Support for activate, auto-precharge, precharge, self-refresh and power-down modes enables robust memory control and power management.
• Standard supply compatibility: 3.0 V–3.6 V operating range aligns with common 3.3 V system rails for straightforward power design.
• Small-footprint package: 90-TFBGA (8×13) reduces PCB area while providing a high-density DRAM solution.
• Clear thermal spec for -6 grade: Specified ambient operating range of 0°C–70°C for system thermal planning.

Why Choose W9812G2KB-6?

The W9812G2KB-6 positions as a practical, high-speed parallel SDRAM option when 128 Mbit of volatile storage, burst-oriented access, and a compact BGA package are required. Its 4-bank architecture and comprehensive SDRAM command support make it suitable for designs that need efficient sequential data transfers and standard SDRAM control features.

This device is appropriate for engineers building systems that rely on a parallel SDRAM interface and 3.0 V–3.6 V power rails, and for boards where a 90-TFBGA package footprint is preferred. Its specified electrical and timing characteristics simplify integration and system-level performance planning.

Request a quote or submit a procurement inquiry to receive pricing and availability for the W9812G2KB-6.