W9812G2KB-6 TR

The W9812G2KB-6 TR from Winbond Electronics is a 128 Mbit synchronous DRAM (SDRAM) device organized as 1M × 4 banks × 32 bits (4M × 32). It implements a parallel SDRAM interface operating up to 166 MHz and supports burst-oriented access for sequential memory reads and writes.

This device targets designs that require compact parallel DRAM in a 90‑TFBGA (8×13) package and operate within a 3.0 V to 3.6 V supply range and 0 °C to 70 °C ambient temperature.

Key Features

• Memory Type  Volatile SDRAM with burst-oriented access and support for burst lengths including 1, 2, 4, 8 or full page as described in the device functional description.
• Density & Organization  128 Mbit total capacity organized as 1M × 4 banks × 32 bits (4M × 32).
• Performance  Clock frequency up to 166 MHz with specified CAS latency behavior referenced in the datasheet; typical access timing examples and read/write timing diagrams are provided.
• Access Time  Access time listed as 5 ns in the device specifications.
• Voltage Supply  Operates from 3.0 V to 3.6 V DC supply.
• Package  90‑TFBGA (8×13) ball grid array package for compact board footprint and high pin density.
• Operating Temperature  Commercial temperature range specified as 0 °C to 70 °C (TA).
• Command & Power Modes  Supports standard SDRAM command set including mode register set, bank activate, auto‑precharge, self‑refresh, power down and no‑operation commands as documented in the datasheet.

Typical Applications

• Embedded memory expansion  Provides 128 Mbit of parallel SDRAM for embedded systems that require burst-capable volatile storage at up to 166 MHz.
• Board-level DRAM replacement  Compact 90‑TFBGA footprint for designs needing a high-density SDRAM device in a small package.
• High-throughput buffering  Banked 1M × 4 organization and burst access support use as a buffer memory where sequential read/write bursts are required.

Unique Advantages

• Parallel SDRAM interface: Direct parallel memory interface for designs that use standard SDRAM signaling and command sequences.
• Banked architecture: 1M × 4 banks × 32 bits organization enables interleaved bank operations and burst transfers documented in the datasheet timing examples.
• Compact BGA package: 90‑TFBGA (8×13) package provides high pin count in a small board area for space-constrained applications.
• Documented timing and command behavior: Comprehensive datasheet sections for operation modes, timing waveforms and example cycles (read/write, refresh, self‑refresh) simplify integration and verification.
• Standard voltage range: 3.0 V to 3.6 V supply range compatible with systems using standard 3.3 V power rails.

Why Choose W9812G2KB-6 TR?

The W9812G2KB-6 TR is positioned as a compact, parallel SDRAM solution delivering 128 Mbit capacity with a banked 1M × 4 × 32 organization and support for burst-oriented transfers up to a 166 MHz clock. Its documented command set, timing diagrams and operational examples help system designers integrate and validate memory behavior for buffering and sequential-access use cases.

This device is appropriate for designs requiring a 90‑TFBGA package, standard 3.0 V–3.6 V supply and commercial temperature operation (0 °C to 70 °C). The included datasheet material on power-up, initialization, power modes and timing provides the technical detail needed for engineering evaluation and system integration.

If you would like pricing, availability or a formal quote for W9812G2KB-6 TR, please request a quote or submit an RFQ to receive commercial terms and lead‑time information.