W9751G8NB25I TR
| Part Description |
IC DRAM 512MBIT PAR 60VFBGA |
|---|---|
| Quantity | 531 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-VFBGA (8x9.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 57.5 ns | Grade | Automotive | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 95°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of W9751G8NB25I TR – IC DRAM 512MBIT PAR 60VFBGA
The W9751G8NB25I TR is a 512 Mbit DDR2 SDRAM memory device in a parallel interface format. It implements a 16M × 4 banks × 8‑bit DDR2 architecture with a 64M × 8 memory organization and is supplied by Winbond Electronics.
Key electrical and mechanical characteristics include a 400 MHz clock frequency, 1.7 V–1.9 V supply range, 57.5 ns access time, and a compact 60‑VFBGA (8×9.5) package. The device is specified for operation from –40°C to 95°C and includes standard DDR2 features documented in the device datasheet.
Key Features
- Memory Core 16M × 4 banks × 8‑bit DDR2 SDRAM architecture with a total density of 512 Mbit; organized as 64M × 8.
- Performance Supports a 400 MHz input clock frequency with an access time of 57.5 ns and a write cycle time (word/page) of 15 ns.
- Voltage and Power Operates from 1.7 V to 1.9 V DC supply range suitable for DDR2 systems; power-down and self-refresh modes are described in the datasheet.
- Interface and Command Support Parallel memory interface with standard DDR2 command set, including Mode Register Set (MRS), Extended Mode Registers (EMRS), and On‑Die Termination (ODT) control as detailed in the datasheet.
- Package 60‑ball VFBGA package (60‑VFBGA, 8×9.5) for compact board-level integration.
- Temperature Range Specified operating temperature range of –40°C to 95°C (TC).
- Documentation Comprehensive datasheet coverage including power‑up and initialization sequence, command functions, timing waveforms, and electrical characteristics.
Unique Advantages
- Compact high-density memory: 512 Mbit capacity in a 60‑VFBGA package provides a balance of density and small package footprint.
- DDR2 performance profile: 400 MHz clock capability and defined access/write timings support DDR2 system timing requirements.
- Wide operating range: Rated for –40°C to 95°C operation for broader thermal deployment.
- Standard DDR2 control features: Mode registers, EMRS, ODT and DLL options are documented for system configuration and tuning.
- Sourced from established supplier: Device is manufactured and documented by Winbond Electronics, with a published datasheet detailing electrical and timing specifications.
Why Choose IC DRAM 512MBIT PAR 60VFBGA?
The W9751G8NB25I TR positions itself as a straightforward DDR2 SDRAM option when a 512 Mbit parallel memory device in a small VFBGA package is required. Its documented timing, register controls and ODT options allow system designers to implement standard DDR2 features while meeting specific voltage and thermal constraints.
This device is suitable for designs that require a defined DDR2 memory footprint with clear electrical and timing specifications, and for teams that rely on the Winbond datasheet for integration guidance and timing validation.
Request a quote or submit an inquiry for pricing and availability of the W9751G8NB25I TR to start your component sourcing or design evaluation.
