W9751G8NB-25 TR

The W9751G8NB-25 TR is a 512 Mbit DDR2 SDRAM device from Winbond Electronics, organized as 64M × 8 with 16M × 4 banks × 8-bit architecture. It provides a parallel DDR2 memory interface operating at a clock frequency of up to 400 MHz and is supplied at 1.7 V to 1.9 V.

This device targets designs that require medium-density, synchronous DRAM storage with standard DDR2 features such as mode registers, on-die termination (ODT), DLL control and power-down/self-refresh functionality, delivered in a 60-ball VFBGA package (8 × 9.5 mm).

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 64M × 8 with 16M × 4 banks × 8-bit architecture, suitable for parallel memory systems.
• Performance Supports a clock frequency up to 400 MHz, with a specified access time of 57.5 ns and a write cycle time (word page) of 15 ns.
• Voltage and Power Operates from a 1.7 V to 1.9 V supply range and includes power management modes described in the device functional description, including power-down and self-refresh.
• Memory Control and Timing Supports Mode Register Set (MRS) and Extended Mode Register Set (EMRS) operations, DLL enable/disable, On-Die Termination (ODT) and Off-Chip Driver (OCD) impedance adjustment as documented in the device functional sections.
• Data Transfer and Commands Standard DDR2 command set supported: bank activate, read/write (including burst read/write and auto-precharge), refresh, precharge and no-op commands with detailed timing and waveform specifications.
• Package and Temperature Supplied in a 60-VFBGA package (8 × 9.5 mm) with an operating temperature range of 0°C to 85°C (TC).

Typical Applications

• Embedded memory subsystems — Provides 512 Mbit of DDR2 parallel memory for embedded designs requiring synchronous DRAM with standard DDR2 control features.
• Consumer and industrial electronics — Fits systems that operate within 0°C to 85°C and require a 60-VFBGA packaged DDR2 memory device at 1.7–1.9 V supply.
• Memory expansion modules — Suitable for modular memory implementations using parallel DDR2 interfaces and 64M × 8 organization.

Unique Advantages

• Compact BGA package: 60-VFBGA (8 × 9.5 mm) footprint enables space-efficient board layouts for compact system designs.
• Synchronous DDR2 operation: 400 MHz clock capability and standard DDR2 command set support predictable timing and integration with DDR2-compatible controllers.
• Flexible memory control: Mode registers, EMRS, ODT and OCD impedance adjustment provide configuration options to tune timing and signal integrity.
• Power management features: Documented power-down and self-refresh modes support reduced-power operational states as defined in the functional description.
• Defined electrical and timing parameters: Access time (57.5 ns) and write cycle time (15 ns) provide clear performance metrics for system timing design.

Why Choose W9751G8NB-25 TR?

The W9751G8NB-25 TR delivers a standardized DDR2 SDRAM solution with a 512 Mbit density, clear timing characteristics and comprehensive functional control (MRS/EMRS, ODT, OCD, DLL). Its 1.7–1.9 V supply range and 60-VFBGA package make it suitable for designs that need a compact, parallel DDR2 memory element with documented electrical and timing behavior.

This device is appropriate for engineers specifying medium-density DDR2 memory where predictable timing, configurable memory control and a small BGA footprint are required. The datasheet provides detailed command, timing and electrical specifications to support system integration and timing verification.

If you would like pricing, availability or to request a formal quote for the W9751G8NB-25 TR, please submit an inquiry or request a quote through our commercial channels.