W9751G8KB-25 TR

The W9751G8KB-25 TR is a 512 Mbit DDR2 SDRAM device organized as 64M × 8 with a parallel memory interface in a 60‑WBGA package. It is a volatile memory component designed for use where compact board-level DRAM is required.

Key characteristics include a 400 MHz clock frequency, 1.7 V–1.9 V supply range, and an operating temperature window of 0°C to 85°C, making it suitable for systems needing a 512 Mbit DDR2 SDRAM in a space-efficient package.

Key Features

• Memory Type & Architecture DDR2 SDRAM, organized as 64M × 8 (16M × 4 banks × 8 bit as documented in the device datasheet).
• Capacity 512 Mbit total memory size suitable for mid-density DRAM requirements.
• Clock & Timing 400 MHz clock frequency with specified access time of 57.5 ns and write cycle time (word page) of 15 ns.
• Power Operates from a 1.7 V to 1.9 V supply, consistent with DDR2 device requirements.
• Package 60‑WBGA (60‑TFBGA, 8 × 12.5 mm footprint) for compact, high-density board integration.
• Interface Parallel memory interface supporting standard DDR2 command and data sequences.
• Device Controls & Functional Features Supports Mode Register Set (MRS) and Extended Mode Registers (EMRS), DLL enable/disable, on‑die termination (ODT), off‑chip driver (OCD) impedance adjustment, burst read/write and auto-precharge operations as detailed in the datasheet.
• Power Management Includes support for power-down and self-refresh modes per the device functional description.
• Operating Temperature Rated for 0°C to 85°C (TC).

Typical Applications

• Board-level DRAM expansion — Integration where a 512 Mbit DDR2 parallel memory in a 60‑WBGA footprint is required.
• Embedded memory subsystems — Use in systems that require DDR2 SDRAM with specified timing (57.5 ns access time) and parallel interface control.
• Compact consumer and industrial designs — Fits designs constrained by PCB area while requiring DDR2 memory features such as ODT, EMRS and power-down/self-refresh support.

Unique Advantages

• Mid-density capacity in a compact package: 512 Mbit organized as 64M × 8 in a 60‑WBGA enables space-efficient memory integration.
• DDR2 architecture and functional control: Mode register and extended mode register support, DLL control, ODT and OCD features provide flexible timing and termination options as documented in the datasheet.
• Defined timing and cycle metrics: 400 MHz clock frequency, 57.5 ns access time and 15 ns write cycle time allow designers to plan system timing precisely.
• Narrow supply range: 1.7 V–1.9 V operation provides clear power design parameters for DDR2 systems.
• Power-management modes: Built-in power-down and self-refresh commands support controlled low‑power behavior per the device functional description.

Why Choose W9751G8KB-25 TR?

The W9751G8KB-25 TR positions itself as a straightforward DDR2 SDRAM option for designs that require a 512 Mbit, 64M × 8 organization in a compact 60‑WBGA footprint. Its documented support for DDR2 functional features — including mode registers, ODT, DLL control, and power-management modes — gives engineers the control needed for board-level memory behavior and signal integrity tuning.

This device is appropriate for projects and designs that demand a clear set of electrical and timing parameters (1.7 V–1.9 V, 400 MHz clock, 57.5 ns access time) and a compact package style. The datasheet provides detailed command, timing and electrical specifications to support system integration and verification.

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