W9751G8KB25I TR

The W9751G8KB25I TR is a 512 Mbit DDR2 SDRAM device in a compact 60-WBGA (8 × 12.5 mm) package. It implements a 64M × 8 memory organization with a parallel DDR2 interface and supports an external clock frequency up to 400 MHz.

Manufactured by Winbond Electronics, this device includes DDR2 functional features such as mode registers, on-die termination (ODT) support and DLL control, and operates over a wide supply and temperature range suitable for board-level memory implementations that require a low-voltage DDR2 solution.

Key Features

• Memory Core DDR2 SDRAM architecture providing 512 Mbit density implemented as 64M × 8 organization.
• Internal Organization Internal arrangement noted in documentation as 16M × 4 banks × 8-bit, consistent with the 64M × 8 organization.
• Performance Supports a clock frequency up to 400 MHz with an access time of 57.5 ns and a write cycle time (word/page) of 15 ns.
• Interface & Modes Parallel DDR2 interface with standard DDR2 command and burst modes; datasheet documents Mode Register Set (MRS), Extended Mode Registers (EMRS), burst read/write and auto-precharge operation.
• On-Die Features Includes on-die termination (ODT) and DLL enable/disable controls as described in the device functional sections of the datasheet.
• Power Low-voltage operation with recommended supply range of 1.7 V to 1.9 V.
• Package & Temperature 60-TFBGA / 60-WBGA (8 × 12.5 mm) package; operating temperature range −40 °C to 95 °C (TC).
• Power Management Supports power-down and self-refresh commands as described in the functional description sections of the datasheet.

Typical Applications

• Board-level DDR2 memory expansion — Provides 512 Mbit parallel DDR2 in a 60-WBGA footprint for compact PCB designs requiring additional DRAM density.
• Space-constrained systems — Low-profile BGA packaging and high density suit small form-factor hardware where board area is limited.
• Low-voltage designs — 1.7 V–1.9 V supply range supports designs targeting lower DDR2 power domains.

Unique Advantages

• High density in a compact package: 512 Mbit capacity in a 60-WBGA (8 × 12.5 mm) package minimizes board area for high-density memory requirements.
• DDR2 feature set: Built-in support for DDR2 mode registers, EMRS, ODT and DLL control enables standard DDR2 command sequences and advanced timing configurations described in the datasheet.
• Performance at 400 MHz clock: Specified support up to 400 MHz with documented access and cycle timing (57.5 ns access time, 15 ns write cycle time) for predictable timing integration.
• Wide operating temperature: −40 °C to 95 °C operating range supports deployments across varied thermal environments.
• Low-voltage operation: 1.7 V–1.9 V supply reduces interface power relative to higher-voltage memories when used within specified conditions.

Why Choose IC DRAM 512MBIT PARALLEL 60WBGA?

The W9751G8KB25I TR positions itself as a compact, low-voltage DDR2 memory option offering 512 Mbit density and a full DDR2 feature set (mode registers, ODT, DLL control, power-down and self-refresh). Its documented timing parameters and 400 MHz clock support enable deterministic integration into systems that require parallel DDR2 memory with defined performance characteristics.

This device is suitable for designers seeking a board-level DDR2 DRAM solution in a 60-WBGA package with an extended operating temperature range and low-voltage supply window, backed by the functional and electrical detail provided in the product datasheet for system integration and validation.

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