W9751G6NB25I TR

The W9751G6NB25I TR is a 512 Mbit DDR2 SDRAM device from Winbond, organized as 32M × 16 with a 4-bank architecture (8M × 4 banks × 16 bit). It implements a parallel DDR2 memory interface designed for systems that require synchronous DRAM with banked access and on-die configuration features.

Key attributes include a 400 MHz clock frequency, low-voltage operation (1.7 V–1.9 V), and a compact 84-ball VFBGA package (8 × 12.5 mm). The device supports features described in the manufacturer datasheet such as mode register configuration, on-die termination (ODT), DLL control and standard DDR2 command and timing functions.

Key Features

• Memory Core 512 Mbit DDR2 SDRAM organized as 32M × 16 (8M × 4 banks × 16 bit) for banked, parallel access.
• Performance 400 MHz clock frequency with an access time of 57.5 ns and a write cycle time (word page) of 15 ns for synchronous read/write operations.
• Low-Voltage Operation Supports a supply voltage range of 1.7 V to 1.9 V to match DDR2 system power rails.
• Package 84-ball VFBGA package (8 × 12.5 mm) for compact board footprint and high-density placement.
• Temperature Range Industrial operating temperature from -40°C to 95°C (TC) for thermally demanding environments.
• DDR2 Functional Controls Mode register and extended mode register support, DLL enable/disable, on-die termination (ODT) and off-chip driver (OCD) impedance adjustment as documented in the datasheet.
• Power Management Supports power-down modes and self-refresh operation as described in the device functional specification for low-power standby behavior.

Typical Applications

• Embedded systems — Used as main or system memory in DDR2-compatible embedded platforms requiring a compact, parallel DRAM solution.
• Industrial control and instrumentation — Wide operating temperature and robust package suit memory needs in industrial controllers and instrumentation modules.
• Networking and communications equipment — Banked DDR2 architecture and parallel interface support buffering and packet/data handling in networking devices.

Unique Advantages

• High-density DDR2 memory: 512 Mbit capacity in a single device enables significant memory storage in a compact footprint.
• Banked architecture for efficient access: 4-bank organization (8M × 4 banks × 16 bit) allows concurrent bank operations and efficient command sequencing.
• Compact VFBGA package: 84-ball VFBGA (8 × 12.5 mm) minimizes PCB area while maintaining ball-grid connectivity for high-density designs.
• Wide temperature tolerance: Rated for -40°C to 95°C operation, supporting thermally challenging deployments.
• Power and signal control features: Support for mode register configuration, ODT, DLL control, self-refresh and power-down modes improves system-level power and signal management options.
• Low-voltage supply: 1.7 V–1.9 V operation reduces system power consumption compared with higher-voltage alternatives.

Why Choose W9751G6NB25I TR?

The W9751G6NB25I TR delivers a practical combination of density, DDR2 timing performance and compact packaging for designs that require parallel SDRAM memory in constrained board space. Its documented mode register controls, on-die termination and power-management features provide the configuration and operational flexibility needed for embedded, industrial and communications applications.

Engineers and procurement teams seeking a 512 Mbit DDR2 device with a defined operating temperature range, low-voltage operation and a standard VFBGA footprint will find this Winbond component suitable for systems that rely on banked DDR2 SDRAM behavior and the functional details provided in the product datasheet.

If you need pricing, availability or technical clarification for W9751G6NB25I TR, request a quote or submit a pricing inquiry to receive detailed procurement information.