W9812G2KB-6I TR

The W9812G2KB-6I TR from Winbond Electronics is a high-speed synchronous dynamic random access memory (SDRAM) device organized as 1M × 4 banks × 32 bits, providing 128 Mbit of parallel DRAM capacity. It implements a parallel SDRAM interface and is designed to deliver up to 166 MHz operation with burst-oriented access.

This device is intended for system designs requiring parallel SDRAM memory with industrial temperature support (−40°C to 85°C for the -6I grade) and a standard 90-TFBGA (8×13) package for compact board-level integration.

Key Features

• Memory architecture 128 Mbit SDRAM organized as 1M × 4 banks × 32 bits (4M × 32 memory organization), enabling burst-oriented accesses within a page.
• High-speed operation Clock frequency rated at 166 MHz with a data bandwidth up to 166M words per second and an access time of 5 ns.
• CAS latency and burst modes Compliant with 166 MHz / CL3 specification; supports burst lengths of 1, 2, 4, 8 or full-page operation and standard burst read/write command sequences.
• Industrial temperature grade The -6I grade supports an operating temperature range of −40°C to 85°C (TA), suitable for temperature-sensitive applications.
• Power and I/O Standard supply voltage range of 3.0 V to 3.6 V for systems using 3.3 V logic domains.
• Package 90-TFBGA (8×13) ball-grid package for dense mounting and compact PCB footprint.
• Control and power management Supports standard SDRAM commands and modes including Mode Register Set, Bank Activate, Auto-precharge, Self Refresh, Power Down, and Clock Suspend as documented in the device specification.

Typical Applications

• Industrial embedded systems — Use where extended temperature support (−40°C to 85°C) and parallel SDRAM capacity are required.
• Legacy parallel-memory designs — Drop-in memory for systems that use a parallel SDRAM interface and standard 3.3 V supply.
• Board-level memory expansion — Compact 90-TFBGA package enables dense board designs needing 128 Mbit SDRAM.

Unique Advantages

• Industrial temperature capability: The -6I grade supports −40°C to 85°C operation, providing wider environmental range for harsh conditions.
• Parallel SDRAM bandwidth: 166 MHz clocking and burst-oriented access deliver predictable, high-rate transfers for parallel-memory architectures.
• Flexible burst and bank control: Multiple burst lengths and a 4-bank architecture enable efficient page-based access patterns and interleaved operations.
• Standard 3.3 V supply compatibility: Operates across a 3.0 V to 3.6 V range, matching common system power rails.
• Compact BGA package: 90-TFBGA (8×13) reduces PCB area while providing the necessary pinout for parallel SDRAM connections.
• Comprehensive SDRAM command set: Supports Mode Register Set, refresh, self-refresh, power-down and other standard SDRAM controls for robust memory management.

Why Choose W9812G2KB

The W9812G2KB-6I TR positions itself as a practical parallel SDRAM option for designs that require 128 Mbit capacity with predictable burst performance at 166 MHz and CL3 timing. Its 4-bank × 32-bit organization and support for standard SDRAM command sequences make it suitable for applications that rely on page-mode and burst transfers.

With industrial temperature support and a compact 90-TFBGA package, this device is appropriate for board-level memory expansion in systems that demand both robustness across temperature and straightforward integration with 3.3 V logic domains.

Request a quote or submit an inquiry for pricing and availability for the W9812G2KB-6I TR to receive detailed lead-time and ordering information.