W9812G6IH-6

The W9812G6IH-6 is a high-speed synchronous DRAM (SDRAM) device organized as 8M × 16 (2M × 4 banks × 16 bits) providing 128 Mbit of volatile memory with a parallel interface. This device implements SDRAM command and timing features and is offered in a 54‑lead TSOP II package (0.400", 10.16 mm width).

Designed for systems that require a 16-bit parallel SDRAM solution, the W9812G6IH-6 operates at a clock frequency of 166 MHz (‑6 speed grade/CL3) with a 3.0 V to 3.6 V supply range and an ambient operating temperature of 0 °C to 70 °C.

Key Features

• Core Architecture  Organized as 2M × 4 banks × 16 bits (8M × 16 total), providing 128 Mbit of volatile storage for parallel-access systems.
• SDRAM Technology  Synchronous DRAM with standard SDRAM command set including bank activate, read/write, auto-precharge, self-refresh and power-down modes.
• Performance  Rated for a 166 MHz clock frequency (‑6 speed grade, CAS Latency 3) with a typical access time of 5 ns.
• Voltage and Power  Operates from 3.0 V to 3.6 V supply, supporting standard 3 V SDRAM systems.
• Package  54‑lead TSOP II (0.400", 10.16 mm width) package for compact, board-level integration.
• Operating Range  Ambient operating temperature specified from 0 °C to 70 °C (TA).

Typical Applications

• Parallel SDRAM system memory  For designs that require a 16-bit parallel SDRAM device providing 128 Mbit of volatile storage.
• PCB designs with TSOP II footprint  Compact 54‑lead TSOP (0.400") package for board-level memory integration where that package is required.
• 3.0 V memory subsystems  Use in systems designed around a 3.0 V to 3.6 V memory power domain and commercial ambient temperatures.

Unique Advantages

• Clear, documented speed grade  The ‑6 speed grade provides a 166 MHz/CL3 operating point explicitly specified in the datasheet, enabling predictable timing integration.
• Standard SDRAM feature set  Supports common SDRAM commands and modes (burst read/write, auto-precharge, self-refresh, power-down), simplifying memory controller design.
• Compact TSOP II package  54‑lead TSOP II (0.400", 10.16 mm) allows dense placement and compatibility with existing TSOP footprint designs.
• Wide supply voltage tolerance  Operational range from 3.0 V to 3.6 V accommodates typical 3 V memory rails.
• Deterministic timing  Specified access time (5 ns) and detailed timing diagrams in the datasheet support accurate system timing analysis.

Why Choose W9812G6IH-6?

The W9812G6IH-6 offers a documented SDRAM solution for designs requiring 128 Mbit of parallel volatile storage with a 16-bit data interface. Its defined 166 MHz (‑6) speed grade, 5 ns access time specification, and standard SDRAM command set make it suitable for engineers implementing predictable memory timing in commercial-temperature systems.

This device is appropriate for projects that need a compact TSOP II package and standard 3.0 V supply compatibility, providing clear electrical and timing specifications for system integration and verification.

If you would like pricing, lead-time information, or a formal quote for the W9812G6IH-6, submit a request or inquiry and our team will respond with the details you need.