W9812G6JB-6

The W9812G6JB-6 is a high-speed synchronous DRAM (SDRAM) device by Winbond Electronics, organized as 2M × 4 banks × 16 bits (equivalent to 8M × 16). It provides 128 Mbit of parallel DRAM storage and is offered in a 54-TFBGA (8×8) package.

Designed for systems that require a 16-bit parallel SDRAM interface, this part supports up to 166 MHz operation (‑6 speed grade) with features for burst access, power-down and self-refresh to support common memory control flows.

Key Features

• Memory architecture  Organized as 2M × 4 banks × 16 bits (8M × 16) delivering 128 Mbit of SDRAM storage in a parallel memory format.
• High-speed operation  Speed grade -6 is compliant to 166 MHz with CAS latency options referenced in the datasheet (CL3 for the 166 MHz grade).
• Access performance  Typical access time listed as 5 ns; supports burst read/write modes and multiple burst length/sequence options in the operation mode section of the datasheet.
• Power management  Supports Power Down, Self Refresh and Auto-refresh commands for reduced power states and data retention as described in the functional command set.
• Parallel interface  Standard 16-bit parallel SDRAM interface to match parallel-memory controllers and legacy SDRAM designs.
• Operating voltage  Rated for 3.0 V to 3.6 V supply range.
• Package  54-TFBGA package, 8×8 mm footprint (54-TFBGA (8x8) supplier device package).
• Operating temperature  Specified operating temperature range: 0°C to 70°C (TA).

Typical Applications

• Parallel-memory systems  Use as a 16-bit parallel SDRAM component in systems that require synchronous DRAM storage and burst transfer support.
• Embedded controllers and modules  Suitable for embedded designs that integrate a parallel SDRAM interface at 3.0–3.6 V supply levels and require up to 166 MHz operation.
• Memory expansion for legacy interfaces  Provides parallel DRAM capacity in designs that rely on traditional SDRAM signaling and banks/burst operation.

Unique Advantages

• Direct parallel interface compatibility: 16-bit parallel SDRAM organization simplifies integration with controllers designed for parallel SDRAM.
• High-speed grade available: The -6 speed grade is specified for 166 MHz operation (CL3), enabling higher data throughput within the SDRAM family performance envelope.
• Comprehensive command set: Supports standard SDRAM commands including Bank Activate, Auto-refresh, Auto-precharge, Power Down and Self Refresh for flexible memory control and power management.
• Compact BGA package: 54-TFBGA (8×8) package provides a small footprint for space-constrained board layouts.
• Wide supply tolerance: Operates across a 3.0 V to 3.6 V supply range to accommodate typical 3.3 V system rails.

Why Choose W9812G6JB-6?

The W9812G6JB-6 positions itself as a straightforward parallel SDRAM option for designs needing 128 Mbit of synchronous DRAM in a compact 54-TFBGA package. Its 2M × 4 bank organization, support for burst modes, and power management commands provide a familiar SDRAM feature set for systems targeting up to 166 MHz operation.

This device is well suited to engineers and procurement teams specifying parallel SDRAM at standard 3.0–3.6 V rails and operating in the specified commercial temperature range (0°C–70°C). The datasheet details operational timing, command sequences and power modes to support design validation and system integration.

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