W9812G6JB-6I

The W9812G6JB-6I is a high-speed synchronous dynamic random access memory (SDRAM) device providing 128 Mbit of volatile storage in a parallel DRAM organization. It is internally organized as 2M words × 4 banks × 16 bits (8M × 16), and the -6I speed grade is compliant with the 166 MHz / CAS Latency 3 (CL3) specification.

Designed for systems that require parallel SDRAM working memory at industry-range temperatures, the device combines 166 MHz operation with a 54-TFBGA (8×8) package and a 3.0 V–3.6 V supply window for integration into industrial and embedded designs.

Key Features

• Memory Capacity and Organization — 128 Mbit total capacity organized as 2M × 4 banks × 16 bits (reported as 8M × 16), providing parallel DRAM access for system working memory.
• SDRAM Technology — Synchronous DRAM supporting standard SDRAM command set and operation modes including burst read/write, auto-precharge, precharge, self-refresh and power-down as documented in the device functional description.
• Performance — Up to 166 MHz clock frequency with CAS Latency 3 (CL3) on the -6/-6I speed grade; specified access timing includes a 5 ns access time parameter in the product data.
• Voltage and Power — Operates from a 3.0 V to 3.6 V supply range suitable for standard 3 V SDRAM domains.
• Package — 54-TFBGA (8×8) package case for compact board footprint and BGA attachment.
• Industrial Temperature Grade — The -6I grade is specified for operation from -40°C to 85°C (TA), supporting industrial temperature environments.
• Parallel Memory Interface — Parallel DRAM interface for direct connection to memory controllers requiring a parallel SDRAM bus.

Typical Applications

• Industrial Embedded Systems — Provides 128 Mbit SDRAM working memory at -40°C to 85°C for systems requiring industry-temperature operation.
• Parallel-Memory Subsystems — Acts as a parallel SDRAM component for systems that implement external DRAM buffers, frame buffers, or working storage using an SDRAM command set.
• High-Speed Buffering — Supports 166 MHz operation and CL3 timing for applications that require synchronous high-speed data bursts within a parallel memory architecture.

Unique Advantages

• Industrial Temperature Support: The -6I grade specification extends operation to -40°C to 85°C, enabling deployment in temperature-challenged environments.
• Standard SDRAM Command Set: Built-in support for common SDRAM modes and commands (burst read/write, auto-precharge, self-refresh, power down) simplifies integration with standard memory controllers.
• Balanced Performance and Capacity: 128 Mbit capacity with 166 MHz clock support and CL3 timing offers a clear performance point for designs needing mid-density synchronous DRAM.
• Compact BGA Footprint: The 54-TFBGA (8×8) package reduces board area while providing the ball map needed for parallel SDRAM connectivity.
• Standard 3 V Supply Range: Operates from 3.0 V to 3.6 V, aligning with common 3 V memory power domains for straightforward power-supply design.

Why Choose W9812G6JB-6I?

The W9812G6JB-6I is positioned for designs that require a mid-density, high-speed parallel SDRAM device with industrial temperature capability. Its 128 Mbit capacity, 166 MHz/CL3 speed grade, and support for the full set of SDRAM operational modes make it suitable for embedded and industrial memory subsystems where synchronous burst transfers and reliable operation across a wide temperature range are required.

This device offers a compact 54-TFBGA package and a standard 3.0 V–3.6 V supply window, delivering a clear integration path for systems that demand predictable timing, parallel interface compatibility, and industrial-grade temperature support.

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