W9812G6KB-6

The W9812G6KB-6 is a high-speed synchronous DRAM (SDRAM) device organized as 2M × 4 banks × 16 bits, providing a total density of 128 Mbit. It implements a burst-oriented architecture with LVTTL I/O and is supplied in a 54-TFBGA (8×8) package.

Designed for systems requiring synchronous DRAM memory with defined timing and control features, this device operates up to 166 MHz with an access time of 5 ns and a supply range of 3.0 V to 3.6 V, supporting standard SDRAM command sequences including self-refresh and power-down modes.

Key Features

• Core / Memory Organization  Organized as 2M × 4 banks × 16 bits (equivalent to 8M × 16); total memory size 128 Mbit.
• Performance  Clock frequency up to 166 MHz with an access time of 5 ns; supports CAS latency and burst read/write operation.
• Interface  LVTTL I/O signaling for memory interface compatibility with LVTTL-based systems.
• Power  Supply voltage range from 3.0 V to 3.6 V.
• Operating Modes  Supports standard SDRAM commands and modes including burst lengths (1, 2, 4, 8 or full page), auto-precharge, self-refresh, power-down and no-operation commands as described in the device functional description.
• Package & Mounting  54-TFBGA (8×8) package for BGA surface-mount assembly.
• Operating Temperature  Commercial temperature range: 0°C to 70°C (TC grade).
• Timing & Control  Detailed timing waveforms and operational examples (burst read/write, interleaved and page modes, refresh cycles) are specified in the device documentation for system integration and timing verification.

Typical Applications

• Embedded Systems  Use as a synchronous DRAM working memory in embedded platforms that require 128 Mbit density and LVTTL interface.
• Consumer Electronics  Suitable for designs needing burst-oriented SDRAM buffering and predictable timing at up to 166 MHz clock rates.
• Networking and Communications  Applicable where burst read/write performance and self-refresh/power-down modes are required for transient or sustained data buffering.

Unique Advantages

• Deterministic burst performance: The device supports burst lengths of 1, 2, 4, 8 or full-page enabling predictable sequential access patterns.
• Well-documented timing: Comprehensive timing waveforms and operation examples in the datasheet simplify system timing verification and integration.
• Compact BGA footprint: 54-TFBGA (8×8) package provides a small, surface-mount solution for space-constrained PCBs.
• Standard LVTTL interface: LVTTL signaling facilitates integration with LVTTL-compatible memory controllers and logic.
• Low-voltage operation: 3.0 V to 3.6 V supply range supports common 3.3 V system rails.

Why Choose W9812G6KB-6?

The W9812G6KB-6 offers a straightforward SDRAM solution with explicit organization of 2M × 4 banks × 16 bits (128 Mbit), defined timing characteristics, and standard LVTTL interface. Its documented operating modes—burst access, auto-precharge, self-refresh and power-down—provide designers with the control needed for deterministic memory behavior in synchronous systems.

This device is suitable for designers and teams who require a compact 54-TFBGA packaged SDRAM with clear timing documentation and a commercial temperature rating of 0°C to 70°C. The available electrical and timing specifications support accurate system-level integration and validation.

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