W9812G6KB-6 TR

The W9812G6KB-6 TR is a high-speed synchronous DRAM (SDRAM) device from Winbond, organized as 2M × 4 banks × 16 bits (8M × 16) and offering 128 Mbit capacity. It provides a LVTTL memory interface and is available in a compact 54-TFBGA (8×8) package.

Designed for systems that require burst-oriented SDRAM operation at up to 166 MHz (CL3) with a 3.0–3.6 V supply and an operating temperature range of 0 °C to 70 °C, the device includes standard SDRAM functions such as burst read/write, auto-precharge, self-refresh and power-down modes.

Key Features

• Memory Architecture  Organized as 2M × 4 banks × 16 bits (8M × 16), enabling banked, burst-oriented accesses.
• Capacity  128 Mbit SDRAM suitable for applications needing moderate on-board DRAM density.
• Clock & Performance  Supports up to 166 MHz operation (CL3) with a data bandwidth up to 166M words per second and typical access time of 5 ns.
• Interface  LVTTL memory interface for standard synchronous DRAM signaling.
• Voltage Supply  Operates from 3.0 V to 3.6 V.
• Package  54‑TFBGA (8×8) supplier device package for compact board-level integration.
• Operating Temperature  Commercial temperature range: 0 °C to 70 °C (TC).
• SDRAM Functionality  Supports burst lengths of 1, 2, 4, 8 and full-page modes, bank activate/precharge commands, auto-precharge, self-refresh, power-down and clock suspend modes as detailed in the device documentation.

Typical Applications

• Embedded memory subsystems  Use as on-board SDRAM where 128 Mbit capacity and burst access at up to 166 MHz are required.
• Board-level DRAM modules  Suited for compact module designs benefiting from the 54‑TFBGA (8×8) package.
• Systems requiring standard SDRAM modes  Appropriate for designs that use burst read/write, auto-precharge and self-refresh features.

Unique Advantages

• High data throughput:  166 MHz clocking and CL3 operation provide a data bandwidth up to 166M words per second for burst transfers.
• Flexible burst access:  Support for multiple burst lengths (1, 2, 4, 8, full page) enables efficient sequential and interleaved access patterns.
• Banked memory organization:  2M × 4 banks × 16 bits architecture allows concurrent bank operations and improved access efficiency.
• Compact package:  54‑TFBGA (8×8) package reduces board footprint while providing standard BGA mounting for production assembly.
• Standard power envelope:  3.0–3.6 V supply compatibility simplifies integration into 3.3 V systems.
• Comprehensive documentation:  Detailed datasheet includes power-up sequences, mode register programming, timing diagrams and operation examples to support design verification and layout.

Why Choose W9812G6KB-6 TR?

The W9812G6KB-6 TR combines a banked 2M × 4 × 16 architecture with 128 Mbit density and 166 MHz synchronous operation to deliver predictable, burst-oriented SDRAM performance for board-level memory requirements. Its LVTTL interface, standard 3.0–3.6 V supply range and 54‑TFBGA package make it suitable for compact system designs that need documented SDRAM timing, power and control behaviors.

With full technical documentation covering command sequences, timing waveforms, refresh and power modes, the device supports engineers during integration and verification phases and helps streamline BOM and layout decisions for systems matching the specified electrical and environmental ranges.

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