W9812G6KB-6I TR
| Part Description |
IC DRAM 128MBIT LVTTL 54TFBGA |
|---|---|
| Quantity | 556 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Winbond Electronics |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of W9812G6KB-6I TR – IC DRAM 128MBIT LVTTL 54TFBGA
The W9812G6KB-6I TR is a high-speed synchronous dynamic random access memory (SDRAM) device providing 128 Mbit of volatile memory in a 54-TFBGA (8×8) package. It is organized as 2M words × 4 banks × 16 bits (8M × 16) and supports LVTTL signaling for memory interface integration.
Designed for applications requiring synchronous burst-oriented access, this industrial-grade (-6I) part supports operation up to 166 MHz with CAS latency 3 and an operating temperature range of -40°C to 85°C.
Key Features
- Memory Core 128 Mbit SDRAM organized as 2M × 4 banks × 16 bits (8M × 16), providing burst-oriented access and banked architecture for sequential and interleaved operations.
- Performance Supports data rates up to 166 MHz and a 5 ns access time, enabling high-speed synchronous transfers with CAS latency 3 operation.
- Interface LVTTL memory interface for standard logic-level connectivity in host designs.
- Power Single-supply operation from 3.0 V to 3.6 V.
- Package 54-TFBGA (8×8) package case for compact board-level integration and reduced footprint.
- Industrial Temperature -40°C to 85°C operating temperature for the -6I industrial grade.
- Synchronous Command Set Supports typical SDRAM command operations including bank activate, burst read/write, auto-precharge, self-refresh and power-down modes as defined in the device functional description.
Typical Applications
- Embedded memory subsystems Use as volatile SDRAM for system working memory where a 128 Mbit LVTTL interface is required.
- Industrial electronics Suitable for designs needing industrial temperature range operation (-40°C to 85°C) with synchronous burst access.
- High-speed buffering Implements high-rate data buffering and temporary storage where up to 166 MHz synchronous transfers are needed.
Unique Advantages
- Industrial-grade temperature support: The -6I grade supports -40°C to 85°C operation, allowing deployment in temperature-challenging environments.
- High synchronous data rate: Up to 166 MHz operation with CAS latency 3 enables predictable, high-speed burst transfers.
- Compact BGA package: 54-TFBGA (8×8) package minimizes board space while providing a standard ball configuration for PCB assembly.
- Standard LVTTL interface: LVTTL signaling simplifies integration with compatible logic-level systems.
- Flexible supply range: Supports 3.0 V to 3.6 V supply voltages to match common system rails.
Why Choose W9812G6KB-6I TR?
The W9812G6KB-6I TR positions itself as a synchronous 128 Mbit SDRAM solution for designs that need predictable, burst-oriented memory with industrial temperature capability. Its banked 2M × 4 × 16-bit organization, support for up to 166 MHz operation with CAS latency 3, and LVTTL interface make it suitable for systems requiring compact, high-speed volatile memory.
This device offers a balance of performance, compact packaging, and industrial temperature tolerance, making it a practical choice for engineers specifying onboard SDRAM where these specific electrical and timing characteristics are required.
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