W9812G6KH-5 TR

The W9812G6KH-5 TR is a high-speed synchronous DRAM (SDRAM) device from Winbond Electronics, organized as 8M × 16 bits (implemented as 2M × 4 banks × 16 bits) with a total density of 128 Mbit. It provides synchronous, burst-capable memory with an LVTTL interface and is offered in a 54‑TSOP II package.

Designed to meet personal computer industrial standard timing, the -5 speed grade supports 200 MHz operation (CL3) delivering up to 200M words per second of data bandwidth. Typical system-level uses include designs requiring synchronous 128 Mbit DRAM with straightforward LVTTL signaling and compact TSOP packaging.

Key Features

• Memory Architecture  Organized as 8M × 16 bits (2M × 4 banks × 16 bits) providing banked SDRAM operation and burst access modes.
• SDRAM Performance  Supports up to 200 MHz clock frequency and is specified for the -5 speed grade (200MHz/CL3); datasheet cites data bandwidth up to 200M words per second.
• Access Timing  Access time specified at 4.5 ns for fast read/write cycles.
• Interface  LVTTL memory interface simplifies integration with LVTTL-compatible controllers and logic.
• Supply and Power  Operates from 3.0 V to 3.6 V supply range as specified.
• Package  Available in a 54‑TSOP II package (0.400", 10.16 mm width) for space-constrained board layouts.
• Operating Temperature  Specified operating ambient temperature range of 0°C to 70°C (TA).
• Comprehensive Documentation  Full datasheet includes functional description, command set, timing waveforms, and package specification for system design and validation.

Typical Applications

• Personal Computer Modules  Memory modules and subsystems designed to meet personal computer industrial timing standards where 128 Mbit SDRAM is required.
• Industrial Equipment  Industrial systems that require synchronous, banked SDRAM with defined operating temperature range and standard LVTTL signaling.
• LVTTL-based Memory Expansion  Systems using LVTTL interfaces that need compact 54‑TSOP packaged DRAM for board-level memory expansion.

Unique Advantages

• Speed-grade compliance: The -5 grade is specified for 200 MHz operation with CL3 timing, enabling 200M words/sec bandwidth where required.
• Banked SDRAM architecture: 2M × 4 banks × 16-bit organization supports flexible burst and interleaved access patterns for improved throughput.
• Compact package: 54‑TSOP II (0.400" / 10.16 mm width) minimizes footprint for dense PCB layouts.
• Standard LVTTL interface: Simplifies signal-level integration with LVTTL-compatible controllers and logic.
• Wide supply range: 3.0 V to 3.6 V operation accommodates common 3 V systems.
• Detailed design support: Complete datasheet with command descriptions, timing diagrams, and package specifications aids integration and validation.

Why Choose W9812G6KH-5 TR?

The W9812G6KH-5 TR positions itself as a practical 128 Mbit SDRAM option for designs requiring synchronous, banked memory with LVTTL signaling and compact TSOP packaging. Its -5 speed grade and 200 MHz/CL3 specification offer predictable timing behavior and documented bandwidth up to 200M words per second for systems aligned to personal computer industrial timing.

With a clear supply voltage window, defined operating temperature range, and a comprehensive datasheet covering functional description and timing, the W9812G6KH-5 TR is suitable for engineers and procurement teams building or supporting PC-standard and industrial memory subsystems that require verifiable SDRAM performance and package-level compactness.

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