W9812G6KH-6

The W9812G6KH-6 is a high‑speed synchronous dynamic random access memory (SDRAM) device organized as 2M × 4 banks × 16 bits, providing a total capacity of 128 Mbit. It implements a standard SDRAM architecture with an LVTTL memory interface and is supplied in a 54‑TSOP II package.

Key electrical and timing characteristics from the device specification include a 166 MHz clock frequency, 5 ns access time, and a supply range of 3.0 V to 3.6 V. The device supports standard SDRAM command and timing modes described in the manufacturer datasheet.

Key Features

• Core Architecture  Organized as 2M × 4 banks × 16 bits (DRAM format) delivering a 128 Mbit memory capacity.
• Performance  166 MHz clock frequency and 5 ns access time; datasheet notes a data bandwidth of up to 200M words per second.
• Interface  LVTTL memory interface for standard synchronous data transfer and control signaling.
• Burst and Command Support  Supports standard SDRAM operations including bank activate, burst read/write, auto‑precharge, self‑refresh and power‑down modes as detailed in the datasheet.
• Power  Supply voltage range 3.0 V to 3.6 V with defined power‑up and initialization sequences in the datasheet.
• Package  54‑TSOP II package (0.400" / 10.16 mm width) suitable for surface‑mount PCB assembly.
• Operating Temperature  Commercial temperature range: 0 °C to 70 °C (TA).

Typical Applications

• Personal Computer Memory Subsystems  Designed to meet personal computer SDRAM requirements and speed grading referenced in the manufacturer documentation.
• Embedded Systems  Provides synchronous DRAM capacity for embedded platforms that require external volatile memory with LVTTL signaling.
• Consumer Electronics  Can be used where a 128 Mbit SDRAM device in a 54‑TSOP II package is required for system memory expansion.

Unique Advantages

• Proven SDRAM Architecture:  2M × 4 banks × 16‑bit organization aligns with standard SDRAM command sets and operational modes for predictable integration.
• High Data Throughput:  166 MHz operation and datasheet‑specified bandwidth of up to 200M words per second support high‑rate data transfer scenarios.
• Comprehensive Command Support:  Built‑in support for burst read/write, auto‑precharge, self‑refresh and power‑down simplifies memory control and power management.
• Standard LVTTL Interface:  LVTTL signaling eases interfacing with logic levels commonly used in system designs.
• Compact Surface‑Mount Package:  54‑TSOP II package provides a compact footprint (0.400" / 10.16 mm width) for board‑level memory implementations.
• Commercial Temperature Grade:  Specified operating range of 0 °C to 70 °C for commercial applications.

Why Choose W9812G6KH-6?

The W9812G6KH-6 combines a standard SDRAM architecture with documented timing, command and package specifications that facilitate integration into systems requiring 128 Mbit of volatile memory. Its 166 MHz clock rating, 5 ns access time and datasheet‑specified bandwidth make it suitable for designs that need predictable synchronous DRAM performance within the device's commercial temperature and voltage ranges.

Designed and documented by the manufacturer with detailed timing, command and package information in the product datasheet, W9812G6KH-6 is appropriate for engineers and procurement teams specifying a 54‑TSOP II, LVTTL‑interfaced SDRAM device for computing and embedded applications.

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