W9825G2JB-6

The W9825G2JB-6 is a 256 Mbit volatile SDRAM device with a parallel memory interface, organized as 16M × 16. It implements a banked SDRAM architecture (4M × 4 banks × 16 bits) and supports burst-oriented access for efficient sequential data transfers.

With a 166 MHz clock capability, 5 ns access time, and a 90‑TFBGA (8×13) package, this device is suited for designs that require compact, high-speed parallel DRAM memory operating at standard 3.0–3.6 V supply levels and commercial temperature range.

Key Features

• Memory Architecture  Organized as 16M × 16 (implemented as 4M × 4 banks × 16 bits) to deliver 256 Mbit total capacity and banked access for burst transfers.
• SDRAM Technology  Synchronous DRAM with burst-oriented access modes and standard SDRAM command support including bank activate, read/write, auto-precharge, self-refresh and power-down sequences.
• Performance  Supports a clock frequency up to 166 MHz with a typical access time of 5 ns for fast read/write cycles.
• Interface  Parallel memory interface designed for direct system integration with standard SDRAM control signals and burst operation.
• Power  Nominal voltage supply range of 3.0 V to 3.6 V suitable for standard 3.3 V systems.
• Package & Thermal  Supplied in a 90‑TFBGA (8×13) package; specified operating ambient temperature range 0°C to 70°C (TA).

Typical Applications

• Embedded systems  Board‑level parallel DRAM memory for systems requiring compact SDRAM capacity and burst access.
• Video and graphics buffering  Parallel SDRAM burst transfers and banked architecture support sequential data streaming and frame buffering.
• Memory expansion modules  Dense 256 Mbit capacity in a 90‑TFBGA package for module or board integration where a parallel SDRAM interface is required.

Unique Advantages

• Banked SDRAM organization  4M × 4 banks × 16 bits implementation enables efficient burst operations across banks for improved throughput on sequential accesses.
• High-frequency operation  166 MHz clock capability combined with a 5 ns access time supports fast system memory cycles.
• Standard parallel interface  Parallel SDRAM signaling simplifies integration into designs that use conventional SDRAM controllers and command sets.
• Compact, assembly-friendly package  90‑TFBGA (8×13) package delivers a small footprint for high-density board layouts.
• Wide supply tolerance  3.0–3.6 V supply range accommodates standard 3.3 V system rails.

Why Choose W9825G2JB-6?

The W9825G2JB-6 provides a straightforward, high-speed parallel SDRAM option with a 256 Mbit capacity, banked architecture and burst-oriented operation. Its 166 MHz capability, 5 ns access time and standard SDRAM command support make it suitable for designs that require compact, fast volatile memory in a 90‑TFBGA package.

This device is appropriate for engineers and procurement teams specifying board-level parallel DRAM where predictable electrical characteristics (3.0–3.6 V supply, 0°C–70°C TA) and established SDRAM operation are required.

Request a quote or submit a parts inquiry for pricing, availability and lead‑time information for the W9825G2JB-6.