W9825G2JB-75

IC DRAM 256MBIT PAR 90TFBGA
Part Description

IC DRAM 256MBIT PAR 90TFBGA

Quantity 1,184 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerWinbond Electronics
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of W9825G2JB-75 – IC DRAM 256MBIT PAR 90TFBGA

The W9825G2JB-75 is a 256 Mbit synchronous dynamic RAM (SDRAM) device organized as 16M × 16 (4M × 4 banks × 16 bits). It provides a parallel SDRAM interface in a compact 90‑TFBGA (8×13) package and is specified for operation at a 133 MHz clock frequency with a 5.4 ns access time.

This device is designed for use where a parallel SDRAM memory element with defined voltage and temperature ranges is required. Key electrical parameters include a supply voltage range of 3.0 V to 3.6 V and an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Type & Architecture 256 Mbit SDRAM organized as 16M × 16 (4M × 4 banks × 16 bits), supporting burst-oriented access.
  • Performance Specified for a 133 MHz clock frequency with a 5.4 ns access time to meet mid‑range synchronous memory timing.
  • Interface Parallel SDRAM interface suitable for systems that require conventional DRAM bus signaling.
  • Voltage Supply Operates from 3.0 V to 3.6 V, enabling compatibility with standard 3.3 V system rails.
  • Package 90‑TFBGA (8×13) supplier device package for a small-footprint, surface-mount implementation.
  • Operating Temperature Rated for 0°C to 70°C (TA), appropriate for commercial temperature-range applications.

Typical Applications

  • Parallel memory expansion — Provides 256 Mbit of SDRAM in a 16M × 16 organization for systems requiring parallel DRAM.
  • Embedded systems — Compact 90‑TFBGA package and standard voltage range support space-constrained board designs using a 3.3 V rail.
  • Mid-performance synchronous memory — 133 MHz operation and 5.4 ns access time for designs that need deterministic SDRAM timing.

Unique Advantages

  • High-density SDRAM — 256 Mbit capacity in a single device reduces component count for designs needing larger DRAM arrays.
  • Standard parallel SDRAM architecture — 16M × 16 organization with multiple banks supports burst-oriented access patterns.
  • Compact BGA package — 90‑TFBGA (8×13) packaging minimizes PCB footprint while providing a robust surface-mount solution.
  • System-level compatibility — 3.0 V to 3.6 V supply and 133 MHz clock support integration with common 3.3 V systems and SDRAM controllers.
  • Commercial temperature rating — 0°C to 70°C ambient operating range for standard commercial applications.

Why Choose W9825G2JB-75?

The W9825G2JB-75 delivers a straightforward, high-density SDRAM option with a parallel interface, predictable timing (133 MHz / 5.4 ns access), and a compact 90‑TFBGA footprint. Its 16M × 16 organization (4M × 4 banks × 16 bits) and 3.0 V to 3.6 V supply range make it suitable for designs that require a conventional SDRAM element with defined electrical and temperature specifications.

This device is well suited for engineers and procurement teams specifying memory for systems that need mid-range synchronous DRAM capacity and performance while keeping board area and BOM count minimized.

Request a quote or submit a pricing inquiry to learn more about availability, lead times, and ordering options for the W9825G2JB-75.

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